Datasheet > IXTL2N450

IXTL2N450

更新时间： 2024-11-18 12:02:51

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	137K
描述
Preliminary Technical Information

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXTL2N450 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	8.5	Base Number Matches：	1

IXTL2N450 数据手册

Preliminary Technical Information

High Voltage

Power MOSFET

V_DSS

I_D25

= 4500V

= 2A

IXTL2N450

R_DS(on)≤ 23Ω

(Electrically Isolated Tab)

ISOPLUS i5-Pak^TM

N-Channel Enhancement Mode

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

4500

Isolated Tab

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

G = Gate

D = Drain

S = Source

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

P_D

T_C= 25°C

220

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

Features

Silicon Chip on Direct-Copper Bond

(DCB) Substrate

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Isolated Mounting Surface

4000V~ RMS Electrical Isolation

Molding Epoxies meet UL 94 V-0

Flammability Classification

F_C

Mounting Force

20..120 / 4.5..27

N/lb.

V_ISOL

Weight

50/60Hz, 1 Minute

4000

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ. Max.

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 250μA

V_GS= ±20V, V_DS= 0V

3.5

5.5

Applications

±200 nA

High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits

I_DSS

V_DS= 3.6kV, V_GS= 0V

V_DS= 4.5kV

V_DS= 3.6kV

25 μA

50 μA

μA

Laser and X-Ray Generation Systems

Note 2, T_J= 125°C

250

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

DS100458A(04/13)

12 3 4 5

中文翻译

下载PDF

与IXTL2N450相关器件

型号	品牌	获取价格	描述	数据表
IXTL2N470	IXYS	获取价格	Power Field-Effect Transistor
IXTL2N470	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTL2X18010T	LITTELFUSE	获取价格	Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 2-Element, N-Channel, Silicon, M
IXTL2x180N10T	LITTELFUSE	获取价格	沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低
IXTL2X200N085T	IXYS	获取价格	Power Field-Effect Transistor, 112A I(D), 85V, 0.006ohm, 2-Element, N-Channel, Silicon, Me
IXTL2X220N075T	IXYS	获取价格	Power Field-Effect Transistor, 120A I(D), 75V, 0.0055ohm, 2-Element, N-Channel, Silicon, M
IXTL350	LITTELFUSE	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTL450	LITTELFUSE	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTL4P50	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 500V V(BR)DSS \| 4A I(D) \| TO-254
IXTL5N65	LITTELFUSE	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,