Datasheet > IXTM10N100

IXTM10N100

更新时间： 2024-11-17 22:47:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	109K
描述
MegaMOS FET

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中文翻译

获取价格

数据手册

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IXTM10N100 数据手册

MegaMOS^TMFET

V_DSS

I_D25

R_DS(on)

IXTH / IXTM 10N100

IXTH / IXTM 12N100

1000V 10 A 1.20 Ω

1000V 12 A 1.05 Ω

N-ChannelEnhancementMode

Symbol

Test Conditions

MaximumRatings

TO-247 AD (IXTH)

V_DSS

V_DGR

T_J= 25°C to 150°C

1000

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Transient

±20

±30

D(TAB)

V_GSM

I_D25

T_C= 25°C

10N100

12N100

TO-204 AA (IXTM)

I_DM

T_C= 25°C, pulse width limited by T_JM

10N100

12N100

P_D

T_C= 25°C

300

T_J

-55 ... +150

150

°C

T_JM

T_stg

G = Gate,

S = Source,

D = Drain,

TAB = Drain

-55 ... +150

M_d

Mountingtorque

1.13/10 Nm/lb.in.

TO-204 = 18 g, TO-247 = 6 g

300 °C

Weight

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

Features

Internationalstandardpackages

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Low package inductance (< 5 nH)

- easy to drive and to protect

Fast switching times

Symbol

Test Conditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Applications

Switch-modeandresonant-mode

powersupplies

Motorcontrols

UninterruptiblePowerSupplies(UPS)

DC choppers

V_DSS

V_GS= 0 V, I_D= 3 mA

1000

V_GS(th)

V_DS= V_GS, I_D= 250 µA

4.5

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

250 µA

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

10N100

12N100

1.20

1.05

Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Highpowerdensity

IXYS reserves the right to change limits, test conditions, and dimensions.

91540E(5/96)

1 - 4

12 3 4

中文翻译

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