是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 11 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 200 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTM12N100 | IXYS |
获取价格 |
MegaMOS FET | |
IXTM12N45 | IXYS |
获取价格 |
12 AMPS, 450-500V, 0.4OM/0.5OM | |
IXTM12N45A | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTM12N50 | IXYS |
获取价格 |
12 AMPS, 450-500V, 0.4OM/0.5OM | |
IXTM12N50A | IXYS |
获取价格 |
Standard Power MOSFET | |
IXTM12N80 | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTM12N90 | IXYS |
获取价格 |
MegaMOS FET | |
IXTM12N95 | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTM12P25 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 12A I(D) | TO-3 | |
IXTM13N65 | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |