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IXTL2N470 PDF预览

IXTL2N470

更新时间: 2024-11-05 21:22:27
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页数 文件大小 规格书
5页 158K
描述
Power Field-Effect Transistor

IXTL2N470 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.76Base Number Matches:1

IXTL2N470 数据手册

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Advance Technical Information  
High Voltage  
Power MOSFET  
VDSS  
ID25  
= 4700V  
= 2A  
IXTL2N470  
RDS(on)  20  
(Electrically Isolated Tab)  
ISOPLUS i5-PakTM  
N-Channel Enhancement Mode  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
4700  
4700  
V
V
Isolated Tab  
VDGR  
D
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G = Gate  
D = Drain  
S = Source  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
2
8
A
A
PD  
TC = 25C  
220  
W
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
Features  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Isolated Mounting Surface  
4000V~ RMS Electrical Isolation  
Molding Epoxies meet UL 94 V-0  
Flammability Classification  
FC  
Mounting Force  
20..120 / 4.5..27  
N/lb.  
V~  
g
VISOL  
Weight  
50/60Hz, 1 Minute  
4000  
8
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
VGS(th)  
IGSS  
VDS = VGS, ID = 250A  
VGS = 20V, VDS = 0V  
3.5  
6.0  
V
Applications  
200 nA  
High Voltage Power Supplies  
Capacitor Discharge Applications  
Pulse Circuits  
IDSS  
VDS = 3.6kV, VGS = 0V  
VDS = 4.7kV  
VDS = 3.6kV  
10 A  
50 μA  
Laser and X-Ray Generation Systems  
Note 2, TJ = 125C  
250  
μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
20  
DS100759(11/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  

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