Datasheet > IXTL2N470

IXTL2N470

更新时间： 2024-11-18 21:05:43

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	159K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTL2N470 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.37
Base Number Matches：	1

IXTL2N470 数据手册

Advance Technical Information

High Voltage

Power MOSFET

V_DSS

I_D25

= 4700V

= 2A

IXTL2N470

R_DS(on) 20

(Electrically Isolated Tab)

ISOPLUS i5-Pak^TM

N-Channel Enhancement Mode

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

4700

Isolated Tab

V_DGR

V_GSS

V_GSM

Continuous

Transient

20

30

G = Gate

D = Drain

S = Source

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

P_D

T_C= 25C

220

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

Features



Silicon Chip on Direct-Copper Bond

(DCB) Substrate

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C



Isolated Mounting Surface

4000V~ RMS Electrical Isolation

Molding Epoxies meet UL 94 V-0

Flammability Classification

F_C

Mounting Force

20..120 / 4.5..27

N/lb.

V_ISOL

Weight

50/60Hz, 1 Minute

4000

Advantages



Easy to Mount

Space Savings

High Power Density



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ. Max.

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 250A

V_GS= 20V, V_DS= 0V

3.5

6.0

Applications

200 nA



High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits



I_DSS

V_DS= 3.6kV, V_GS= 0V

V_DS= 4.7kV

V_DS= 3.6kV

10 A

50 μA



Laser and X-Ray Generation Systems

Note 2, T_J= 125C

250

μA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1



DS100759(11/16)

12 3 4 5 6

中文翻译

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