是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | IN-LINE, R-PSIP-T5 | Reach Compliance Code: | compliant |
风险等级: | 5.39 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 750 mJ | 外壳连接: | ISOLATED |
配置: | COMPLEX | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 100 A | 最大漏极电流 (ID): | 100 A |
最大漏源导通电阻: | 0.009 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T5 | 元件数量: | 2 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 150 W |
最大脉冲漏极电流 (IDM): | 450 A | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTL2x180N10T | LITTELFUSE |
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沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低 | |
IXTL2X200N085T | IXYS |
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Power Field-Effect Transistor, 112A I(D), 85V, 0.006ohm, 2-Element, N-Channel, Silicon, Me | |
IXTL2X220N075T | IXYS |
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Power Field-Effect Transistor, 120A I(D), 75V, 0.0055ohm, 2-Element, N-Channel, Silicon, M | |
IXTL350 | LITTELFUSE |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTL450 | LITTELFUSE |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTL4P50 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-254 | |
IXTL5N65 | LITTELFUSE |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTL5N65 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTL5P40 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254 | |
IXTL6N60 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254 |