Datasheet > IXTA-200N085T

IXTA-200N085T

更新时间： 2024-01-30 12:05:26

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	221K
描述
N-Channel Enhancement Mode Avalanche Rated

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IXTA-200N085T 数据手册

IXTA200N085T

IXTP200N085T

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

TO-263AA (IXTA) Outline

(T_J= 25° C unless otherwise specified)

g_fs

V_DS= 10 V; I_D= 60 A, Note 1

125

C_iss

C_oss

C_rss

7600

1040

200

V_GS= 0 V, V_DS= 25 V, f = 1 MHz

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 25 A

R_G= 5 Ω (External)

Pins: 1 - Gate

2 - Drain

3 - Source 4, TAB - Drain

Q_g(on)

Q_gs

152

Dim.

Millimeter

Inches

Min. Max.

Min.

Max.

V_GS= 10 V, V_DS= 0.5 V_DSS, I_D= 25 A

4.06

2.03

4.83

2.79

.160

.080

.190

.110

Q_gd

0.51

1.14

0.99

1.40

.020

.045

.039

.055

R_thJC

R_thCH

0.31°C/W

°C/W

0.46

1.14

0.74

1.40

.018

.045

.029

.055

TO-220

0.50

8.64

7.11

9.65

8.13

.340

.280

.380

.320

9.65

6.86

2.54

10.29

8.13

BSC

.380

.270

.100

.405

.320

BSC

Source-Drain Diode

14.61

2.29

1.02

1.27

15.88

2.79

1.40

1.78

0.38

.575

.090

.040

.050

.625

.110

.055

.070

.015

Symbol

Test Conditions

Characteristic Values

T_J= 25° C unless otherwise specified)

Min. Typ.

Max.

I_S

V_GS= 0 V

200

0.46

0.74

.018

.029

I_SM

V_SD

t_rr

Pulse width limited by T_JM

I_F= 25 A, V_GS= 0 V, Note 1

540

1.0

TO-220AB (IXTP) Outline

I_F= 25 A, -di/dt = 100 A/µs

V_R= 40 V, V_GS= 0 V

Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;

2. On through-hole packages, R_DS(on)Kelvin test contact

location is 5 mm or less from the package body.

Pins: 1 - Gate

2 - Drain

3 - Source 4, TAB - Drain

PRELIMINARYTECHNICALINFORMATION

The product presented herein is under development. The Technical Specifications

offered are derived from data gathered during objective characterizations of preliminary

engineering lots; but also may yet contain some information supplied during a pre-

production design evaluation. IXYS reserves the right to change limits, test conditions,

and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844

one or moreof the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405B2 6,759,692

6,710,463

7,005,734 B2

7,063,975 B2

6771478 B2 7,071,537

123 4 5

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与IXTA-200N085T相关器件

型号	品牌	获取价格	描述	数据表
IXTA200N085T7	IXYS	获取价格	Power Field-Effect Transistor, 200A I(D), 85V, 0.005ohm, 1-Element, N-Channel, Silicon, Me
IXTA20N65X	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA20N65X	IXYS	获取价格	Power Field-Effect Transistor,
IXTA20N65X2	LITTELFUSE	获取价格	这些新型器件采用电荷补偿原理和专有工艺技术开发，具有最低的导通电阻，以及低栅极电荷和卓越的
IXTA20N65X-TRL	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTA220N04T2	IXYS	获取价格	DC to DC Synchronous Converter Design
IXTA220N04T2	LITTELFUSE	获取价格	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能
IXTA220N04T2-7	IXYS	获取价格	Power Field-Effect Transistor, 220A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, M
IXTA220N04T2-7	LITTELFUSE	获取价格	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能
IXTA220N04T2-TRL	IXYS	获取价格	Power Field-Effect Transistor,

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