Datasheet > 晶体管 > IGBT> IXSN80N60A

IXSN80N60A

更新时间： 2024-01-30 21:22:03

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
2页	74K
描述
High Current IGBT - Short Circuit SOA Capability

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXSN80N60A 数据手册

V_CES= 600V

High Current IGBT

IXSN80N60A

I_C25

= 160 A

= 3V

V_CE(sat)

Short Circuit SOA Capability

Preliminary Data

Symbol

TestConditions

MaximumRatings

miniBLOC , SOT-227 B

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MW

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C90

I_CM

T_C= 25°C

160

T_C= 90°C

1 = Emitter

2 = Gate

3 = Collector

4 = Emitter

T_C= 25°C, 1 ms

320

Either Emitter terminal can be used as Main or

Kelvin Emitter

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 22 W

Clamped inductive load, L = 30 mH

I_CM= 160

@ 0.8 V_CES

t_SC

(SCSOA)

V_GE= 15 V, V_CE= 0.6 V_CES, T_J= 125°C

R_G= 22 W, non-repetitive

Features

Internationalstandardpackage

miniBLOC

P_C

T_C= 25°C

500

Aluminium-nitrideisolation

- highpowerdissipation

Isolation voltage 3000 V~

UL registered E 153432

Low V_CE(sat)

V_ISOL

50/60 Hz

I_ISOL£ 1 mA

t = 1 min

t = 1 s

2500

3000

T_J

-55 ... +150

150

°C

T_JM

T_stg

- forminimumon-stateconduction

losses

-55 ... +150

Low collector-to-case capacitance

(< 100 pF)

- reduces RFI

Low package inductance (< 10 nH)

- easy to drive and to protect

M_d

Mountingtorque

Terminalconnectiontorque(M4)

1.5/13 Nm/lb.in.

Weight

Applications

AC motor speed control

DC servo and robot drives

DC choppers

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

Uninterruptiblepowersupplies(UPS)

Switch-modeandresonant-mode

powersupplies

BV_CES

V_GE(th)

I_C= 500 mA, V_GE= 0 V

600

I_C= 8 mA, V_CE= V_GE

I_CES

V_CE= 0.8 V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

400

Advantages

Space savings

Easy to mount with 2 screws

High power density

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

V_CE(sat)

I_C= I_C90, V_GE= 15 V

IXYS reserves the right to change limits, test conditions, and dimensions.

95595B(6/97)

1 - 2

中文翻译

下载PDF

与IXSN80N60A相关器件

型号	品牌	获取价格	描述	数据表
IXSN80N60AU1	IXYS	获取价格	IGBT with Diode - Short Circuit SOA Capability
IXSN80N60B	IXYS	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), N-Channel, MINIBLOC-4
IXSN80N60BD1	IXYS	获取价格	IGBT with Diode Short Circuit SOA Capability
IXSP10N60B2D1	IXYS	获取价格	High Speed IGBT with Diode
IXSP15N120B	IXYS	获取价格	S Series - Improved SCSOA Capability
IXSP16N60	IXYS	获取价格	Low V CE(sat) IGBT - Short Circuit SOA Capability
IXSP20N60B2	IXYS	获取价格	Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB,
IXSP20N60B2D1	IXYS	获取价格	Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263, 3
IXSP24N60B	IXYS	获取价格	Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3
IXSP2N100	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1KV V(BR)CES \| 3A I(C) \| TO-220AB