Datasheet > IXFH340N075T2

IXFH340N075T2

更新时间： 2024-11-21 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	181K
描述
TrenchT2 HiPerFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IXFH340N075T2 数据手册

Advance Technical Information

TrenchT2^TMHiPerFET^TM

Power MOSFET

V_DSS= 75V

I_D25= 340A

R_DS(on)≤ 3.2mΩ

IXFH340N075T2

IXFT340N075T2

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-247 (IXFH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

D (TAB)

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

V_DGR

V_GSM

Transient

± 20

TO-268 (IXFT)

I_D25

I_LRMS

I_DM

T_C= 25°C (Chip Capability)

Lead Current Limit, RMS

340

160

850

T_C= 25°C, Pulse Width Limited by T_JM

I_A

T_C= 25°C

170

960

935

D (TAB)

E_AS

P_D

G = Gate

= Drain

S = Source

TAB = Drain

T_J

-55 ... +175

175

°C

T_JM

T_stg

-55 ... +175

Features

T_L

T_sold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

^zInternational Standard Packages

^z175°C Operating Temperature

^zHigh Current Handling Capability

^zAvalanche Rated

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-247

TO-268

^zFast Intrinsic Diode

Low R_DS(on)

Advantages

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

Easy to Mount

Space Savings

High Power Density

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 3mA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

2.0

4.0

±200 nA

Applications

I_DSS

25 μA

T_J= 150°C

1.5 mA

DC/DC Converters and Off-line UPS

Primary- Side Switch

High Current Switching Applications

R_DS(on)

V_GS= 10V, I_D= 100A, Note 1

3.2 mΩ

DS100194(9/09)

12 3 4 5 6

中文翻译

下载PDF

IXFH340N075T2 替代型号

型号	品牌	替代类型	描述	数据表
IXFT340N075T2	IXYS	功能相似	TrenchT2 HiPerFET Power MOSFET

与IXFH340N075T2相关器件

型号	品牌	获取价格	描述	数据表
IXFH34N50P3	LITTELFUSE	获取价格	PolarP3? HiPerFET?产品系列是针对300V, 500V至600V产品系列的
IXFH34N60X2A	LITTELFUSE	获取价格	MOSFET的本征快速体二极管HiPerFET展现出极强的软恢复特征，可最大限度地减少电磁
IXFH34N65X2	IXYS	获取价格	MOSFET N-CH 650V 34A TO-247
IXFH34N65X2	LITTELFUSE	获取价格	这些新型器件采用电荷补偿原理和专有工艺技术开发，具有最低的导通电阻，以及低栅极电荷和卓越的
IXFH350	IXYS	获取价格	HIPERFET Power MOSFTETs
IXFH35N30	IXYS	获取价格	HIPERFET Power MOSFTETs
IXFH35N30S	IXYS	获取价格	Power Field-Effect Transistor, 35A I(D), 300V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
IXFH36N50P	IXYS	获取价格	PolarHV HiPerFET Power MOSFET
IXFH36N50P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFH36N55Q	LITTELFUSE	获取价格	Power Field-Effect Transistor, 36A I(D), 550V, 0.16ohm, 1-Element, N-Channel, Silicon, Met