Datasheet > IXFH34N65X2

IXFH34N65X2

更新时间： 2024-01-04 06:53:32

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	204K
描述
MOSFET N-CH 650V 34A TO-247

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中文翻译

获取价格

数据手册

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IXFH34N65X2 数据手册

X2-Class HiPerFET^TM

Power MOSFET

V_DSS= 650V

I_D25= 34A

R_DS(on) 100m

IXFA34N65X2

IXFP34N65X2

IXFH34N65X2

N-Channel Enhancement Mode

Avalanche Rated

TO-263 AA (IXFA)

Fast Intrinsic Diode

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

TO-220AB (IXFP)

T_J= 25C to 150C

650

V_DGR

T_J= 25C to 150C, R_GS= 1M

V_GSS

V_GSM

Continuous

Transient

30

40

D (Tab)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

TO-247 (IXFH)

I_A

T_C= 25C

E_AS

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

D (Tab)

540

G = Gate

S = Source

= Drain

Tab = Drain

T_J

-55 ... +150

150

C

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-220 & TO-247)

10.65 / 2.2..14.6

1.13 / 10

N/lb

Nm/lb.in



International Standard Packages

Low R_DS(ON)and Q_G

Avalanche Rated



Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0

Low Package Inductance

Advantages

Symbol

Test Conditions

Characteristic Values



High Power Density

Easy to Mount

Space Savings

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 2.5mA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

650

3.5

5.0

Applications

100 nA



Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

I_DSS

10 A

1.75 mA

T_J= 125C



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

100 m



DS100683C(03/16)

12 3 4 5 6

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