Datasheet > IXFH36N60P

IXFH36N60P

更新时间： 2023-12-06 20:13:10

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	336K
描述
功能与特色: 优点: 应用:

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中文翻译

获取价格

数据手册

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IXFH36N60P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

IXFH 36N60P

IXFK 36N60P

IXFT 36N60P

V_DSS= 600 V

I_D25= 36 A

≤ 190 mΩ

t_rr^DS(on)≤ 200 ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-247 (IXFH)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25° C to 150° C

600

T_J= 25° C to 150° C; R_GS= 1 MΩ

V_GSS

V_GSM

Continuous

Transient

D (TAB)

I_D25

I_DM

T_C=25° C

TO-268 (IXFT) Case Style

T_C= 25° C, pulse width limited by T_JM

I_AR

T_C=25° C

E_AR

E_AS

T_C=25° C

1.5

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 4 Ω

V/ns

D (TAB)

T_C=25° C

650

TO-264 AA (IXFK)

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

M_d

Mounting torque (TO-247 & TO-264)

1.13/10 Nm/lb.in.

Weight

TO-247

TO-268

TO-264

(TAB)

G = Gate

= Drain

S = Source Tab = Drain

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

Features

Symbol

Test Conditions

Characteristic Values

International standard packages

Fast recovery diode

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

(T_J= 25° C, unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 4 mA

V_GS= 30 V_DC, V_DS= 0

600

3.0

5.0

200

I_DSS

V_DS= V_DSS

V_GS= 0 V

100

1000

µA

Advantages

T_J= 125° C

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

190 mΩ

Easy to mount

Space savings

High power density

DS99383E(02/06)

12 3 4 5

中文翻译

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