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IXFH40N30Q_11 PDF预览

IXFH40N30Q_11

更新时间: 2024-01-03 18:06:38
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IXYS /
页数 文件大小 规格书
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描述
HiPerFET Power MOSFETs Q-Class

IXFH40N30Q_11 数据手册

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Not for New Designs  
HiPerFETTM  
Power MOSFETs  
Q-Class  
VDSS = 300V  
ID25 = 40A  
RDS(on) 85mΩ  
IXFH40N30Q  
IXFT40N30Q  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
TO-268 (IXFT)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
300  
300  
V
V
TO-247 (IXFH)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
40  
A
A
G
D
D (Tab)  
160  
S
IA  
TC = 25°C  
TC = 25°C  
40  
A
J
G = Gate  
D
= Drain  
EAS  
1.0  
S = Source  
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
5
V/ns  
W
300  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z
International Standard Packages  
Low Intrinsic Gate Resistance  
Low Package Inductance  
Fast Intrinsic Rectifier  
-55 ... +150  
z
z
z
z
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Low RDS(on) and QG  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
300  
2.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 4mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
Applications  
4.0  
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
z
±100 nA  
z
IDSS  
25 μA  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
z
TJ = 125°C  
1 mA  
z
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
85 mΩ  
DS98504C(03/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  

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