Datasheet > IXFH40N30Q_11

IXFH40N30Q_11

更新时间： 2024-11-20 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	129K
描述
HiPerFET Power MOSFETs Q-Class

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中文翻译

获取价格

数据手册

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IXFH40N30Q_11 数据手册

Not for New Designs

HiPerFET^TM

Power MOSFETs

Q-Class

V_DSS= 300V

I_D25= 40A

R_DS(on)≤ 85mΩ

IXFH40N30Q

IXFT40N30Q

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low Q_g

TO-268 (IXFT)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

300

TO-247 (IXFH)

V_DGR

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

D (Tab)

160

I_A

T_C= 25°C

G = Gate

= Drain

E_AS

1.0

S = Source

Tab = Drain

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

300

Features

T_J

-55 ... +150

150

°C

T_JM

T_stg

International Standard Packages

Low Intrinsic Gate Resistance

Low Package Inductance

Fast Intrinsic Rectifier

-55 ... +150

T_L

T_sold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

Low R_DS(on)and Q_G

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-268

TO-247

Advantages

High Power Density

Easy to Mount

Space Savings

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

300

2.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 4mA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

4.0

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

±100 nA

I_DSS

25 μA

Power Supplies

DC Choppers

Temperature and Lighting Controls

T_J= 125°C

1 mA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

85 mΩ

DS98504C(03/11)

12 3 4 5

中文翻译

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