Datasheet > IXDS430SI

IXDS430SI

更新时间： 2024-02-16 20:07:58

品牌	Logo	应用领域
IXYS		驱动器双极性晶体管
页数	文件大小	规格书
12页	782K
描述
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

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中文翻译

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技术参数
数据手册

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IXDS430SI 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	SOIC	包装说明：	SOP,
针数：	28	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
风险等级：	5.82	高边驱动器：	YES
接口集成电路类型：	BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER	JESD-30 代码：	R-PDSO-G28
长度：	17.9 mm	功能数量：	1
端子数量：	28	最高工作温度：	125 °C
最低工作温度：	-55 °C	标称输出峰值电流：	30 A
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	2.65 mm	最大供电电压：	35 V
最小供电电压：	8.5 V	标称供电电压：	18 V
表面贴装：	YES	温度等级：	MILITARY
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
断开时间：	0.039 µs	接通时间：	0.045 µs
宽度：	7.5 mm	Base Number Matches：	1

IXDS430SI 数据手册

IXDN430 / IXDI430 / IXDD430 / IXDS430

30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

General Description

Features

• Built using the advantages and compatibility

of CMOS and IXYS HDMOS^TMprocesses

• Latch-UpProtected

• High Peak Output Current: 30A Peak

• Wide Operating Range: 8.5V to 35V

• Under Voltage Lockout Protection

• Ability to Disable Output under Faults

• High Capacitive Load

TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhigh

current gate drivers specifically designed to drive MOSFETs

and IGBTs to their minimum switching time and maximum

practical frequency limits. The IXD_430 can source and sink

30A of peak current while producing voltage rise and fall times

of less than 30ns. The input of the drivers are compatible with

TTL or CMOS and are fully immune to latch up over the entire

operating range. Designed with small internal delays, cross

conduction/current shoot-through is virtually eliminated in all

configurations. Their features and wide safety margin in

operatingvoltageandpowermakethedriversunmatchedin

performanceandvalue.

Drive Capability: 5600 pF in <25ns

• Matched Rise And Fall Times

• Low Propagation Delay Time

• LowOutputImpedance

• LowSupplyCurrent

The IXD_430 incorporates a unique ability to disable the output

under fault conditions. The standard undervoltage lockout is at

12.5V which can also be set to 8.5V in the IXDS430SI. When a

logical low is forced into the Enable inputs, both final output

stage MOSFETs (NMOS and PMOS) are turned off. As a

result, the output of the IXDD430 enters a tristate mode and

enables a Soft Turn-Off of the MOSFET when a short circuit is

detected. This helps prevent damage that could occur to the

MOSFET if it were to be switched off abruptly due to a dv/dt

over-voltagetransient.

Applications

• DrivingMOSFETsandIGBTs

• MotorControls

• LineDrivers

• PulseGenerators

• Local Power ON / OFF Switch

• Switch Mode Power Supplies (SMPS)

• DCtoDCConverters

• PulseTransformerDriver

• Limiting di/dt Under Short Circuit

• Class D Switching Amplifiers

TheIXDN430isconfiguredasanoninvertinggatedriver, andthe

IXDI430isaninvertinggatedriver.TheIXDS430canbeconfigured

eitherasanoninvertingorinvertingdriver.TheIXD_430areavailable

inthestandard28-pinSIOC(SI-CT),5-pinTO-220(CI),andinthe

TO-263(YI)surfacemountpackages.CTor'CoolTab'forthe28-

pin SOIC package refers to the backside metal heatsink tab.

Ordering Information

Part Num ber

IXDD430YI

IXDD430CI

IXDI430YI

Package Type

5-pin TO -263

5-pin TO -220

5-pin TO -263

5-pin TO -220

5-pin TO -263

5-pin TO -220

Tem p. Range

Configuration

Non Inverting with

Enable

-55°C to +125°

Inverting

IXDI430CI

IXDN430YI

IXDN430CI

Non Inverting

Inverting / Non

Inverting with Enable

and UVSEL

-55°C to +125°

IXDS430SI

28-pin SO IC

DS99045B(8/04)

First Release

12 3 4 5 6 7...12

中文翻译

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与IXDS430SI相关器件

型号	品牌	获取价格	描述	数据表
IXDS502	IXYS	获取价格	2 Ampere Single Low-Side Ultrafast MOSFET Drivers
IXDS502D1B	IXYS	获取价格	Buffer/Inverter Based MOSFET Driver, 2A, CMOS, 2 X 2 MM, ROHS COMPLIANT, DFN-6
IXDS502D1BT/R	IXYS	获取价格	Buffer/Inverter Based MOSFET Driver, 2A, CMOS, 2 X 2 MM, ROHS COMPLIANT, DFN-6
IXDT30N120	IXYS	获取价格	High Voltage IGBT with optional Diode
IXDT30N120AU1	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 50A I(C) \| TO-268AA
IXDT30N120D1	IXYS	获取价格	High Voltage IGBT with optional Diode
IXE2412	INTEL	获取价格	Interface Circuit, PBGA600, 40 X 40 MM, 1.27 MM PITCH, TBGA-600
IXE2412EA	INTEL	获取价格	Interface Circuit, PBGA600, TBGA-600
IXE2412EE	INTEL	获取价格	Interface Circuit, PBGA600, TBGA-600
IXE2424EA	INTEL	获取价格	Interface Circuit, PBGA792, TBGA-792

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