Datasheet > IXEL40N400

IXEL40N400

更新时间： 2024-11-06 14:56:35

品牌	Logo	应用领域
力特 - LITTELFUSE		电机驱动双极性晶体管
页数	文件大小	规格书
6页	194K
描述
NPT IGBT拥有方形RBSOA和10 us的短路耐受能力。具有正温度系数Vce(sat)，是并联的理想选择。该系列产品是电机驱动应用的首选。借助这种IGBT，电路中原本采用多个级联低压开

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中文翻译

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数据手册

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IXEL40N400 数据手册

V_CES= 4000V

I_C110= 40A

V_CE(sat)≤ 3.2V

Very High Voltage

IGBT

IXEL40N400

t_fi(typ)= 425ns

( Electrically Isolated Tab)

ISOPLUS i5-Pak^TM

Symbol

Test Conditions

Maximum Ratings

V_CES

V_GES

V_GEM

T_J= 25°C to 150°C

Continuous

4000

±20

Isolated Tab

Transient

±30

I_C25

I_C110

T_C= 25°C

T_C= 110°C

G = Gate

C = Collector

E = Emitter

I_CM

P_C

Pulse Width Limited by T_JM, 1ms, V_GE= 25V

T_C= 25°C

400

380

T_J

- 40 ... +150

150

°C

Features

T_JM

T_stg

^ꢀSilicon Chip on Direct-Copper Bond

(DCB) Substrate

- 40 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10s

300

260

°C

^ꢀIsolated Mounting Surface

^ꢀ4000V~ Electrical Isolation

^ꢀUL Recognized Package

^ꢀHigh Peak Current Capability

^ꢀLow Saturation Voltage

V_ISOL

F_C

I_ISOL< 1mA, 50/60 Hz, t = 1 minute

Mounting Force

4000

30..170 / 7..36

Nm/lb-in.

Weight

^ꢀMolding Epoxies Meet UL 94 V-0

Flammability Classification

Advantages

ꢀ

High Power Density

Easy to Mount

Symbol

Test Conditions

Characteristic Values

ꢀ

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

V_GE(th)

I_CES

I_C= 10mA, V_CE= V_GE

5.5

7.0

Applications

V_CE= V_CES, V_GE= 0V

100 μA

Note 2, T_J= 125°C

1.5

ꢀ

Capacitor Discharge

I_GES

V_CE= 0V, V_GE= ±20V

±500 nA

ꢀ

Pulser Circuits

V_CE(sat)

I_C= I_C110, V_GE= 15V, Note 1

2.4

3.0

3.2

T_J= 125°C

DS99385B(09/12)

12 3 4 5 6

中文翻译

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