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IXEN60N120D1 PDF预览

IXEN60N120D1

更新时间: 2024-11-17 22:11:59
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
2页 39K
描述
NPT IGBT

IXEN60N120D1 数据手册

 浏览型号IXEN60N120D1的Datasheet PDF文件第2页 
Advanced Technical Information  
NPT3 IGBT  
in miniBLOC package  
IXEN 60N120  
IXEN 60N120D1  
IC25  
VCES  
VCE(sat)typ. = 2.1 V  
= 100 A  
= 1200 V  
C
E
C
miniBLOC, SOT-227 B  
E
E153432  
G
G
G
E
C = Collector  
G = Gate  
E = Emitter *  
IXEN 60N120  
IXEN 60N120D1  
C
*EitherEmitterterminalcanbeusedasMainorKelvinEmitter  
Features  
IGBT  
• NPT3 IGBT  
Symbol  
VCES  
Conditions  
Maximum Ratings  
- low saturation voltage  
- positive temperature coefficient for  
easy paralleling  
- fast switching  
- short tail current for optimized  
performance in resonant circuits  
TVJ = 25°C to 150°C  
1200  
V
V
±
VGES  
20  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
100  
65  
A
A
• miniBLOC package  
±
- isolated copper base plate  
- screw terminals  
- kelvin emitter terminal for easy drive  
- industry standard outline  
ICM  
VCEK  
VGE = 15 V; RG = 22 ; TVJ = 125°C  
100  
VCES  
A
µs  
W
RBSOA, Clamped inductive load; L = 100 µH  
±
tSC  
(SCSOA)  
VCE = 900 V; VGE = 15 V; RG = 22 ; TVJ = 125°C  
non-repetitive  
10  
Applications  
Ptot  
TC = 25°C  
445  
• single switches  
and with complementary free wheeling  
diodes  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
• choppers  
min.  
typ. max.  
• phaselegs, H bridges, three phase  
bridges e.g. for  
- power supplies, UPS  
- AC, DC and SR drives  
- induction heating  
VCE(sat)  
IC = 60 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.1  
2.5  
2.7  
V
V
VGE(th)  
ICES  
IC = 2 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.1 mA  
mA  
0.1  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
150  
60  
700  
50  
7.2  
6.0  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 60 A  
±
VGE = 15 V; RG = 22 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600 V; VGE = 15 V; IC = 50 A  
3.8  
500  
nF  
nC  
RthJC  
0.28 K/W  
© 2002 IXYS All rights reserved  
1 - 2  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  

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