Datasheet > IXER35N120D1_06

IXER35N120D1_06

更新时间： 2024-02-27 06:27:52

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
4页	152K
描述
NPT3 IGBT with Diode in ISOPLUS247

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中文翻译

获取价格

数据手册

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IXER35N120D1_06 数据手册

IXER 35N120D1

NPT³IGBT

I_C25

V_CES

= 50A

=1200V

with Diode

in ISOPLUS247^TM

V_CE(sat)typ.= 2.2V

ISOPLUS 247^TM

E153432

Isolated Backside

C = Collector E = Emitter

G = Gate

Features

IGBT

• NPT³IGBT

- low saturation voltage

- positive temperature coefficient for

easy paralleling

- fast switching

Symbol

V_CES

Conditions

Maximum Ratings

T_VJ= 25°C to 150°C

1200

V_GES

- short tail current for optimized

performance in resonant circuits

• HiPerFRED^TMdiode

I_C25

I_C90

T_C= 25°C

T_C= 90°C

I_CM

V_CEK

V_GE= 15 V; R_G= 39 Ω; T_VJ= 125°C

RBSOA, Clamped inductive load; L = 100 µH

V_CES

µs

- fast reverse recovery

- low operating forward voltage

- low leakage current

t_SC

(SCSOA)

V_CE= 900V; V_GE= 15 V; R_G= 39 Ω; T_VJ= 125°C

non-repetitive

• ISOPLUS 247^TMpackage

- isolated back surface

- low coupling capacity between pins

and heatsink

P_tot

T_C= 25°C

200

- high reliability

- industry standard outline

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise specified)

Applications

min.

typ. max.

• single switches

• choppers with complementary free

wheeling diodes

• phaselegs, H bridges, three phase

bridges e.g. for

- power supplies, UPS

- AC, DC and SR drives

- induction heating

V_CE(sat)

I_C= 35 A; V_GE= 15 V; T_VJ= 25°C

T_VJ= 125°C

2.2

2.6

2.8

V_GE(th)

I_CES

I_C= 1 mA; V_GE= V_CE

4.5

6.5

V_CE= V_CES;V_GE= 0 V; T_VJ= 25°C

T_VJ= 125°C

0.4 mA

0.4

I_GES

V_CE= 0 V; V_GE

20 V

200 nA

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

440

5.4

2.6

Inductive load, T_VJ= 125°C

V_CE= 600 V; I_C= 35 A

V_GE= 15 V; R_G= 39 Ω

C_ies

Q_Gon

V_CE= 25 V; V_GE= 0 V; f = 1 MHz

V_CE= 600 V; V_GE= 15 V; I_C= 35 A

150

R_thJC

R_thCH

0.6 K/W

K/W

with heatsink compound

0.3

1 - 4

12 3 4

中文翻译

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