Datasheet > IXER60N120_06

IXER60N120_06

更新时间： 2024-02-27 16:19:21

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
4页	162K
描述
NPT3 IGBT in ISOPLUS 247

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中文翻译

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数据手册

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IXER60N120_06 数据手册

IXER 60N120

NPT³IGBT

I_C25

V_CES

= 95 A

= 1200 V

in ISOPLUS 247^TM

V_CE(sat)typ.= 2.1 V

ISOPLUS 247^TM

E153432

Isolated Backside

C = Collector E = Emitter

G = Gate

Features

IGBT

• NPT³IGBT

- low saturation voltage

- positive temperature coefficient for

easy paralleling

- fast switching

Symbol

V_CES

Conditions

Maximum Ratings

T_VJ= 25°C to 150°C

1200

V_GES

I_C25

I_C90

T_C= 25°C

T_C= 90°C

- short tail current for optimized

performance in resonant circuits

I_CM

V_CEK

V_GE= 15 V; R_G= 22 Ω; T_VJ= 125°C

100

V_CES

µs

• ISOPLUS 247^TMpackage

- isolated back surface

- low coupling capacity between pins

and heatsink

- high reliability

- industry standard outline

RBSOA, Clamped inductive load; L = 100 µH

t_SC

(SCSOA)

V_CE= 900 V; V_GE= 15 V; R_G= 22 Ω; T_VJ= 125°C

non-repetitive

P_tot

T_C= 25°C

375

Applications

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise specified)

• single switches

and with complementary free wheeling

diodes

• choppers

• phaselegs, H bridges, three phase

bridges e.g. for

- power supplies, UPS

- AC, DC and SR drives

- induction heating

min.

typ. max.

V_CE(sat)

I_C= 60 A; V_GE= 15 V; T_VJ= 25°C

T_VJ= 125°C

2.1

2.5

2.7

V_GE(th)

I_CES

I_C= 2 mA; V_GE= V_CE

4.5

6.5

V_CE= V_CES;V_GE= 0 V; T_VJ= 25°C

T_VJ= 125°C

0.1 mA

0.1

I_GES

V_CE= 0 V; V_GE

20 V

200 nA

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

680

7.2

4.8

Inductive load, T_VJ= 125°C

V_CE= 600 V; I_C= 60 A

V_GE= 15 V; R_G= 22 Ω

C_ies

Q_Gon

V_CE= 25 V; V_GE= 0 V; f = 1 MHz

V_CE= 600 V; V_GE= 15 V; I_C= 50 A

3.8

350

R_thJC

R_thJH

0.33 K/W

K/W

0.66

1 - 4

12 3 4

中文翻译

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