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IXER35N120D1 PDF预览

IXER35N120D1

更新时间: 2024-01-27 23:56:17
品牌 Logo 应用领域
IXYS 二极管双极性晶体管
页数 文件大小 规格书
2页 54K
描述
NPT3 IGBT with Diode

IXER35N120D1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:ISOPLUS包装说明:ISOPLUS247, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.8
外壳连接:ISOLATED最大集电极电流 (IC):50 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
门极发射器阈值电压最大值:6.5 V门极-发射极最大电压:20 V
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):490 ns标称接通时间 (ton):135 ns

IXER35N120D1 数据手册

 浏览型号IXER35N120D1的Datasheet PDF文件第2页 
Advanced Technical Information  
NPT3 IGBT  
IXER 35N120D1  
IC25  
VCES  
VCE(sat)typ. = 2.2 V  
= 50 A  
= 1200 V  
with Diode  
in ISOPLUS 247TM  
ISOPLUS 247TM  
E153432  
C
G
G
C
E
Isolated Backside*  
E
G = Gate  
C = Collector E = Emitter  
*Patent pending  
Features  
IGBT  
• NPT3 IGBT  
- low saturation voltage  
- positive temperature coefficient for  
easy paralleling  
- fast switching  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
V
V
±
VGES  
20  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
50  
32  
A
A
- short tail current for optimized  
performance in resonant circuits  
±
ICM  
VCEK  
VGE = 15 V; RG = 39 ; TVJ = 125°C  
50  
VCES  
A
µs  
W
• HiPerFREDTM diode  
- fast reverse recovery  
- low operating forward voltage  
- low leakage current  
RBSOA, Clamped inductive load; L = 100 µH  
±
tSC  
(SCSOA)  
VCE = 900V; VGE = 15 V; RG = 39 ; TVJ = 125°C  
non-repetitive  
10  
• ISOPLUS 247TM package  
- isolated back surface  
- low coupling capacity between pins  
and heatsink  
Ptot  
TC = 25°C  
200  
Symbol  
Conditions  
Characteristic Values  
- high reliability  
(TVJ = 25°C, unless otherwise specified)  
- industry standard outline  
min.  
typ. max.  
Applications  
VCE(sat)  
IC = 35 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.2  
2.6  
2.8  
V
V
• single switches  
• choppers with complementary free  
wheeling diodes  
• phaselegs, H bridges, three phase  
bridges e.g. for  
VGE(th)  
ICES  
IC = 1 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.4 mA  
mA  
0.4  
- power supplies, UPS  
- AC, DC and SR drives  
- induction heating  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
150  
60  
700  
50  
4.2  
3.5  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 35 A  
VGE = 15 V; RG = 39 Ω  
±
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600 V; VGE = 15 V; IC = 30 A  
2
250  
nF  
nC  
RthJC  
RthJH  
0.6 K/W  
K/W  
1.2  
© 2002 IXYS All rights reserved  
1 - 2  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  

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