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IXEL40N400 PDF预览

IXEL40N400

更新时间: 2024-11-21 12:27:43
品牌 Logo 应用领域
IXYS 双极性晶体管高压
页数 文件大小 规格书
5页 173K
描述
Very High Voltage IGBT ( Electrically Isolated Tab)

IXEL40N400 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:ISOPLUS包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
风险等级:8.32其他特性:UL RECOGNIZED
外壳连接:ISOLATED最大集电极电流 (IC):40 A
集电极-发射极最大电压:4000 V配置:SINGLE
门极发射器阈值电压最大值:7 V门极-发射极最大电压:20 V
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):380 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:GENERAL PURPOSE SWITCHING晶体管元件材料:SILICON
标称断开时间 (toff):1170 ns标称接通时间 (ton):260 ns
Base Number Matches:1

IXEL40N400 数据手册

 浏览型号IXEL40N400的Datasheet PDF文件第2页浏览型号IXEL40N400的Datasheet PDF文件第3页浏览型号IXEL40N400的Datasheet PDF文件第4页浏览型号IXEL40N400的Datasheet PDF文件第5页 
VCES = 4000V  
IC110 = 40A  
VCE(sat) 3.2V  
Very High Voltage  
IGBT  
IXEL40N400  
tfi(typ) = 425ns  
( Electrically Isolated Tab)  
ISOPLUS i5-PakTM  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VGES  
VGEM  
TJ = 25°C to 150°C  
Continuous  
4000  
±20  
V
V
V
G
E
Isolated Tab  
C
Transient  
±30  
IC25  
IC110  
TC = 25°C  
TC = 110°C  
90  
40  
A
A
G = Gate  
C = Collector  
E = Emitter  
ICM  
PC  
Pulse Width Limited by TJM, 1ms, VGE = 25V  
TC = 25°C  
400  
380  
A
W
TJ  
- 40 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
- 40 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
Isolated Mounting Surface  
4000V~ Electrical Isolation  
UL Recognized Package  
High Peak Current Capability  
Low Saturation Voltage  
VISOL  
FC  
IISOL < 1mA, 50/60 Hz, t = 1 minute  
Mounting Force  
4000  
30..170 / 7..36  
8
V~  
Nm/lb-in.  
g
Weight  
Molding Epoxies Meet UL 94 V-0  
Flammability Classification  
Advantages  
High Power Density  
Easy to Mount  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 10mA, VCE = VGE  
5.5  
7.0  
V
Applications  
VCE = VCES, VGE = 0V  
100 μA  
Note 2, TJ = 125°C  
1.5  
mA  
Capacitor Discharge  
IGES  
VCE = 0V, VGE = ±20V  
±500 nA  
Pulser Circuits  
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
2.4  
3.0  
3.2  
V
V
TJ = 125°C  
DS99385B(09/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  

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