5秒后页面跳转
IXEN60N120_07 PDF预览

IXEN60N120_07

更新时间: 2024-11-18 03:14:39
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
4页 98K
描述
NPT3 IGBT in miniBLOC package

IXEN60N120_07 数据手册

 浏览型号IXEN60N120_07的Datasheet PDF文件第2页浏览型号IXEN60N120_07的Datasheet PDF文件第3页浏览型号IXEN60N120_07的Datasheet PDF文件第4页 
IXEN 60N120  
IXEN 60N120D1  
NPT3 IGBT  
in miniBLOC package  
IC25  
VCES  
= 100 A  
= 1200 V  
VCE(sat)typ. = 2.1 V  
C
E
C
E
miniBLOC, SOT-227 B  
E
E153432  
G
G
G
C = Collector  
G = Gate  
E = Emitter *  
IXEN 60N120  
IXEN 60N120D1  
C
*EitherEmitterterminalcanbeusedasMainorKelvinEmitter  
Features  
• NPT3 IGBT  
IGBT  
Symbol  
VCES  
Conditions  
Maximum Ratings  
- low saturation voltage  
- positive temperature coefficient for  
easy paralleling  
- fast switching  
- short tail current for optimized  
performance in resonant circuits  
• optional HiPerFREDTM diode  
- fast reverse recovery  
- low operating forward voltage  
- low leakage current  
TVJ = 25°C to 150°C  
1200  
20  
V
V
VGES  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
100  
65  
A
A
ICM  
VCEK  
VGE = 15 V; RG = 22 ; TVJ = 125°C  
RBSOA, Clamped inductive load; L = 100 µH  
100  
VCES  
A
µs  
W
tSC  
(SCSOA)  
VCE = 900 V; VGE = 15 V; RG = 22 ; TVJ = 125°C  
non-repetitive  
10  
• miniBLOC package  
- isolated copper base plate  
- screw terminals  
Ptot  
TC = 25°C  
445  
- kelvin emitter terminal for easy drive  
- industry standard outline  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Applications  
min.  
typ. max.  
• single switches  
• choppers with complementary free  
wheeling diode  
• phaselegs, H bridges, three phase  
bridges e.g. for  
- power supplies, UPS  
- AC, DC and SR drives  
- induction heating  
VCE(sat)  
IC = 60 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.1  
2.5  
2.7  
V
V
VGE(th)  
ICES  
IC = 2 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.8 mA  
mA  
0.8  
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
80  
50  
680  
30  
7.2  
4.8  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 60 A  
VGE = 15 V; RG = 22 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600 V; VGE = 15 V; IC = 50 A  
3.8  
350  
nF  
nC  
RthJC  
0.28 K/W  
© 2003 IXYS All rights reserved  
1 - 4  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  

与IXEN60N120_07相关器件

型号 品牌 获取价格 描述 数据表
IXEN60N120D1 IXYS

获取价格

NPT IGBT
IXEP2300 IXYS

获取价格

300-Output ePaper Gate Driver
IXEP2300WB IXYS

获取价格

300-Output ePaper Gate Driver
IXEP2300XB IXYS

获取价格

300-Output ePaper Gate Driver
IXER20N120 IXYS

获取价格

NPT3 IGBT in ISOPLUS247
IXER20N120D1 IXYS

获取价格

NPT3 IGBT in ISOPLUS247
IXER35N120D1 IXYS

获取价格

NPT3 IGBT with Diode
IXER35N120D1_06 IXYS

获取价格

NPT3 IGBT with Diode in ISOPLUS247
IXER60N120 IXYS

获取价格

NPT3 IGBT
IXER60N120_06 IXYS

获取价格

NPT3 IGBT in ISOPLUS 247