IXEH40N120

更新时间： 2024-11-17 21:55:27

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
4页	82K
描述
NPT3 IGBT

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中文翻译

获取价格

数据手册

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IXEH40N120 数据手册

IXEH 40N120

IXEH 40N120D1

NPT³IGBT

I_C25

V_CES

= 60 A

= 1200 V

V_CE(sat)typ.= 2.4 V

TO-247 AD

C(TAB)

IXEH40N120

IXEH40N120D1

Features

IGBT

• NPT³IGBT

Symbol

V_CES

Conditions

Maximum Ratings

- low saturation voltage

- positive temperature coefficient for

easy paralleling

T_VJ= 25°C to 150°C

1200

- fast switching

V_GES

- short tail current for optimized

performance in resonant circuits

• optional HiPerFRED^TMdiode

- fast reverse recovery

- low operating forward voltage

- low leakage current

• TO-247 package

- industry standard outline

- epoxy meets UL 94V-0

I_C25

I_C90

T_C= 25°C

T_C= 90°C

I_CM

V_CEK

V_GE= 15 V; R_G= 39 Ω; T_VJ= 125°C

V_CES

µs

RBSOA, Clamped inductive load; L = 100 µH

t_SC

(SCSOA)

V_CE= 900V; V_GE= 15 V; R_G= 39 Ω; T_VJ= 125°C

non-repetitive

P_tot

T_C= 25°C

300

Applications

• AC drives

Symbol

Conditions

Characteristic Values

• DC drives and choppers

• Uninteruptible power supplies (UPS)

• switched-mode and resonant-mode

power supplies

(T_VJ= 25°C, unless otherwise specified)

min.

typ. max.

V_CE(sat)

I_C= 40 A; V_GE= 15 V; T_VJ= 25°C

T_VJ= 125°C

2.4

2.8

3.0

• inductive heating, cookers

V_GE(th)

I_CES

I_C= 1 mA; V_GE= V_CE

4.5

6.5

V_CE= V_CES;V_GE= 0 V; T_VJ= 25°C

T_VJ= 125°C

0.4 mA

0.4

I_GES

V_CE= 0 V; V_GE

20 V

200 nA

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

440

6.1

3.0

Inductive load, T_VJ= 125°C

V_CE= 600 V; I_C= 40 A

V_GE= 15 V; R_G= 39 Ω

C_ies

Q_Gon

V_CE= 25 V; V_GE= 0 V; f = 1 MHz

V_CE= 600 V; V_GE= 15 V; I_C= 25 A

250

R_thJC

0.42 K/W

1 - 4

IXYS Semiconductor GmbH

IXYS Corporation

Edisonstr. 15,

Phone: +49-6206-503-0, Fax: +49-6206-503627

D-68623 Lampertheim

3540 Bassett Street, Santa Clara CA 95054

Phone: (408) 982-0700, Fax: 408-496-0670

12 3 4

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