是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
Reach Compliance Code: | compliant | 风险等级: | 5.64 |
Is Samacsys: | N | 其他特性: | AEC-Q200; TS16949; AT-CUT; TR, 7 INCH |
老化: | 3 PPM/YEAR | 晶体/谐振器类型: | PARALLEL - FUNDAMENTAL |
驱动电平: | 200 µW | 频率稳定性: | 0.003% |
频率容差: | 10 ppm | JESD-609代码: | e4 |
负载电容: | 32 pF | 安装特点: | SURFACE MOUNT |
标称工作频率: | 9.999999 MHz | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 物理尺寸: | L3.2XB2.5XH0.8 (mm)/L0.126XB0.098XH0.031 (inch) |
串联电阻: | 800 Ω | 表面贴装: | YES |
端子面层: | Gold (Au) - with Nickel (Ni) barrier | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXA16-JFDF8-25.000MHZ | ILSI |
获取价格 |
Parallel - Fundamental Quartz Crystal, | |
IXA16-JHDF18-11.000MHZ | ILSI |
获取价格 |
Parallel - Fundamental Quartz Crystal, | |
IXA16-JHFF32-21.000MHZ | ILSI |
获取价格 |
Parallel - Fundamental Quartz Crystal, | |
IXA16-JHFF32-66.000MHZ | ILSI |
获取价格 |
Parallel - Fundamental Quartz Crystal, | |
IXA16-JHFF32-9.999999MHZ | ILSI |
获取价格 |
Parallel - Fundamental Quartz Crystal, | |
IXA17IF1200HJ | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXA17IF1200HJ | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ROHS COM | |
IXA20I1200PB | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXA20I1200PZ | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXA20IF1200HB | IXYS |
获取价格 |
IGBT 1200V 38A 165W TO247 |