型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXA20I1200PZ | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXA20IF1200HB | IXYS |
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IGBT 1200V 38A 165W TO247 | |
IXA20IF1200HB | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXA20PG1200DHGLB | IXYS |
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Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS-9 | |
IXA20PG1200DHGLB | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS-9 | |
IXA20PT1200LB | LITTELFUSE |
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我们的表面安装式功率器件(SMPD)封装技术在ISOPLUS?封装组合基础上有所扩展,纳入 | |
IXA20RG1200DHGLB | LITTELFUSE |
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我们的表面安装式功率器件(SMPD)封装技术在ISOPLUS?封装组合基础上有所扩展,纳入 | |
IXA27IF1200HJ | IXYS |
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Easy paralleling due to the positive temperature coefficient of the on-state voltage | |
IXA27IF1200HJ | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXA30PG1200DHGLB | LITTELFUSE |
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我们的表面安装式功率器件(SMPD)封装技术在ISOPLUS?封装组合基础上有所扩展,纳入 |