5秒后页面跳转
捷配首页

Datasheet > IS66WVD204816ALL-7010BLI
IS66WVD204816ALL-7010BLI PDF预览

IS66WVD204816ALL-7010BLI

更新时间： 2024-11-14 19:59:15
品牌 Logo 应用领域
美国芯成 - ISSI 内存集成电路
页数 文件大小 规格书
52页 1128K
描述
Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 8 X 6 MM, MO-207, VFBGA-54

阅读下载

中文翻译

获取价格

IS66WVD204816ALL-7010BLI 技术参数

生命周期：Active包装说明：VFBGA,
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.8
最长访问时间：70 nsJESD-30 代码：R-PBGA-B54
长度：8 mm内存密度：33554432 bit
内存集成电路类型：PSEUDO STATIC RAM内存宽度：16
功能数量：1端子数量：54
字数：2097152 words字数代码：2000000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：2MX16
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：PARALLEL认证状态：Not Qualified
座面最大高度：1 mm最大供电电压 (Vsup)：1.95 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
宽度：6 mmBase Number Matches：1

IS66WVD204816ALL-7010BLI 数据手册

 浏览型号IS66WVD204816ALL-7010BLI的Datasheet PDF文件第2页浏览型号IS66WVD204816ALL-7010BLI的Datasheet PDF文件第3页浏览型号IS66WVD204816ALL-7010BLI的Datasheet PDF文件第4页浏览型号IS66WVD204816ALL-7010BLI的Datasheet PDF文件第5页浏览型号IS66WVD204816ALL-7010BLI的Datasheet PDF文件第6页浏览型号IS66WVD204816ALL-7010BLI的Datasheet PDF文件第7页 
IS66WVD204816ALL  
Advanced Information  
32Mb Async and Burst CellularRAM 2.0  
Overview  
The IS66WVD204816ALL is an integrated memory device containing 32Mbit Pseudo Static Random  
Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a  
multiplexed address and data bus scheme to minimize pins and includes a industry standard burst  
mode for increased read and write bandwidth. The device includes several power saving modes :  
Reduced Array Refresh mode where data is retained in a portion of the array and Temperature  
Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a  
standard asynchronous mode and high performance burst mode. The die has separate power rails,  
VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.  
Features  
z Single device supports asynchronous and burst  
z Low Power Consumption  
operation  
y Asynchronous Operation < 25 mA  
y Burst operation < 45 mA (@133Mhz)  
y Standby < 110 uA(max.)  
z Mixed Mode supports asynchronous write and  
synchronous read operation  
z Dual voltage rails for optional performance  
y VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  
z Multiplexed address and data bus  
y ADQ0~ADQ15  
z Asynchronous mode read access : 70ns  
z Burst mode for Read and Write operation  
y 4, 8, 16 or Continuous  
y Deep power-down (DPD) < 3uA (Typ)  
z Low Power Feature  
y Reduced Array Refresh  
y Temperature Controlled Refresh  
z Operation Frequency up to 133MHz  
z Operating temperature Range  
Industrial -40°C~85°C  
z Package: 54-ball VFBGA  
Copyright © 2009 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its  
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services  
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information  
and before placing orders for products.  
1
www.issi.com - SRAM@issi.com  
Rev.00A | February 2010  
1234567...52

中文翻译

下载PDF

与IS66WVD204816ALL-7010BLI相关器件

型号 品牌 获取价格 描述 数据表
IS66WVD409616ALL-7008BLI ISSI

获取价格

 		Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 8 X 6 MM, MO-207, VFBGA-54
IS66WVD4M16ALL-7008BLI ISSI

获取价格

 		Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, MO-207, VFBGA-54
IS66WVD4M16ALL-7010BLI-TR ISSI

获取价格

 		Pseudo Static RAM,
IS66WVE1M16ALL ISSI

获取价格

 		1.8V Core Async/Page PSRAM
IS66WVE1M16ALL-70BLI ISSI

获取价格

 		1.8V Core Async/Page PSRAM
IS66WVE1M16ALL-70BLI-TR ISSI

获取价格

 		Memory IC, 1MX16, CMOS, PBGA48
IS66WVE1M16BLL ISSI

获取价格

 		3.0V Core Async/Page PSRAM
IS66WVE1M16BLL-55BLI ISSI

获取价格

 		3.0V Core Async/Page PSRAM
IS66WVE1M16BLL-70BLI ISSI

获取价格

 		3.0V Core Async/Page PSRAM
IS66WVE1M16CLL ISSI

获取价格

 		Asynchronous and page mode interface

与IS66WVD204816ALL-7010BLI相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证