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IS66WVE1M16ALL-70BLI

更新时间： 2024-11-14 12:23:07

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
30页	522K
描述
1.8V Core Async/Page PSRAM

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IS66WVE1M16ALL

Advanced Information

1.8V Core Async/Page PSRAM

Overview

The IS66WVE1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access

Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several

power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and

Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power

rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

Features

 Asynchronous and page mode interface

 Dual voltage rails for optional performance

 VDD 1.8V, VDDQ 1.8V

 Low Power Feature

 Temperature Controlled Refresh

 Partial Array Refresh

 Deep power-down (DPD) mode

 Operating temperature Range

Industrial -40°C~85°C

 Page mode read access

 Interpage Read access : 70ns

 Intrapage Read access : 20ns

 Low Power Consumption

 Package:

48-ball TFBGA, 48-pin TSOP-I

 Asynchronous Operation < 30 mA

 Intrapage Read < 18mA

 Standby < 80 uA (max.)

 Deep power-down (DPD) < 3uA (Typ)

Notes :

1. The 48-pin TSOP-I package option is not yet available. Please contact SRAM marketing at sram@issi.com for

additional information.

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

www.issi.com - SRAM@issi.com

Rev.00C | November 2010

12 3 4 5 6 7...30

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与IS66WVE1M16ALL-70BLI相关器件

型号	品牌	获取价格	描述	数据表
IS66WVE1M16ALL-70BLI-TR	ISSI	获取价格	Memory IC, 1MX16, CMOS, PBGA48
IS66WVE1M16BLL	ISSI	获取价格	3.0V Core Async/Page PSRAM
IS66WVE1M16BLL-55BLI	ISSI	获取价格	3.0V Core Async/Page PSRAM
IS66WVE1M16BLL-70BLI	ISSI	获取价格	3.0V Core Async/Page PSRAM
IS66WVE1M16CLL	ISSI	获取价格	Asynchronous and page mode interface
IS66WVE1M16EALL	ISSI	获取价格	Asynchronous and page mode interface
IS66WVE1M16EALL-70BLI	ISSI	获取价格	16Mb Async/Page PSRAM
IS66WVE1M16EBLL-55BLI	ISSI	获取价格	Pseudo Static RAM, 1MX16, 55ns, CMOS, PBGA48, TFBGA-48
IS66WVE1M16EBLL-55BLI-TR	ISSI	获取价格	IC PSRAM 16M PARALLEL 48TFBGA
IS66WVE1M16EBLL-70BLI	ISSI	获取价格	Pseudo Static RAM, 1MX16, 70ns, CMOS, PBGA48, TFBGA-48

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