Datasheet > IS66WVE1M16TALL-70BLI

IS66WVE1M16TALL-70BLI

更新时间： 2024-11-15 01:03:23

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
34页	688K
描述
16Mb Async/Page PSRAM

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IS66/67WVE1M16EALL/EBLL/ECLL

IS66/67WVE1M16TALL/TBLL/TCLL

16Mb Async/Page PSRAM

NOVEMBER 2015

Overview

The IS66/67WVE1M16EALL/BLL/CLL and IS66/67WVE1M16TALL/BLL/CLL are integrated memory device

containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M

words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where

data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby

current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate

power supply from the device core.

Features

 Asynchronous and page mode interface

 Dual voltage rails for optional performance

 Low Power Feature

 Temperature Controlled Refresh

 Partial Array Refresh

 Deep power-down (DPD) mode

 Operating temperature Range

 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V

 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V

 Page mode read access

 Interpage Read access : 60ns, 70ns

 Intrapage Read access : 25ns

 Low Power Consumption

 Asynchronous Operation < 30 mA

 Intrapage Read < 23mA

 Standby < 150 µA (max.)

 Deep power-down (DPD)

 ALL/CLL: < 3µA (Typ)

Industrial: -40°C~85°C

Automotive A1: -40°C~85°C

 Packages:

48-ball TFBGA, 48-pin TSOP-I

 BLL: < 10µA (Typ)

Notes :

1. The 48-pin TSOP-I package option is not yet available. Please contact SRAM marketing at sram@issi.com for

additional information.

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

www.issi.com - SRAM@issi.com

Rev. C | Oct. 2015

12 3 4 5 6 7...34

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与IS66WVE1M16TALL-70BLI相关器件

型号	品牌	获取价格	描述	数据表
IS66WVE1M16TBLL-55BLI	ISSI	获取价格	16Mb Async/Page PSRAM
IS66WVE1M16TBLL-70BLI	ISSI	获取价格	16Mb Async/Page PSRAM
IS66WVE1M16TCLL-70BLI	ISSI	获取价格	16Mb Async/Page PSRAM
IS66WVE2M16BLL	ISSI	获取价格	Asynchronous and page mode interface
IS66WVE2M16BLL-70BLI	ISSI	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48
IS66WVE2M16CLL	ISSI	获取价格	Asynchronous and page mode interface
IS66WVE2M16DALL	ISSI	获取价格	1.8V Core Async/Page PSRAM
IS66WVE2M16DALL-70BLI	ISSI	获取价格	1.8V Core Async/Page PSRAM
IS66WVE2M16DBLL	ISSI	获取价格	3.0V Core Async/Page PSRAM
IS66WVE2M16DBLL-70BLI	ISSI	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-48

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