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IS66WVD4M16ALL-7010BLI-TR

更新时间： 2024-11-15 09:56:03
品牌 Logo 应用领域
美国芯成 - ISSI 内存集成电路
页数 文件大小 规格书
52页 940K
描述
Pseudo Static RAM,

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IS66WVD4M16ALL-7010BLI-TR 技术参数

生命周期：Active包装说明：VFBGA,
Reach Compliance Code：unknown风险等级：5.8
Is Samacsys：N最长访问时间：70 ns
其他特性：IT ALSO SUPPORTS SYNCHRONOUS READ IN MIXED MODEJESD-30 代码：R-PBGA-B54
长度：8 mm内存密度：67108864 bit
内存集成电路类型：PSEUDO STATIC RAM内存宽度：16
功能数量：1端子数量：54
字数：4194304 words字数代码：4000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：4MX16
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：PARALLEL座面最大高度：1 mm
最大供电电压 (Vsup)：1.95 V最小供电电压 (Vsup)：1.7 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM宽度：6 mm
Base Number Matches：1

IS66WVD4M16ALL-7010BLI-TR 数据手册

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IS66WVD4M16ALL  
64Mb Async and Burst CellularRAM 2.0  
Overview  
The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random  
Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a  
multiplexed address and data bus scheme to minimize pins and includes a industry standard burst  
mode for increased read and write bandwidth. The device includes several power saving modes :  
Reduced Array Refresh mode where data is retained in a portion of the array and Temperature  
Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a  
standard asynchronous mode and high performance burst mode. The die has separate power rails,  
VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.  
Features  
Single device supports asynchronous and burst  
Low Power Consumption  
Asynchronous Operation < 25 mA  
Burst operation < 35 mA (@104Mhz)  
Standby < 150 uA(max.)  
operation  
Mixed Mode supports asynchronous write and  
synchronous read operation  
Deep power-down (DPD) < 3uA (Typ)  
Low Power Feature  
Dual voltage rails for optional performance  
VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  
Multiplexed address and data bus  
ADQ0~ADQ15  
Reduced Array Refresh  
Temperature Controlled Refresh  
Operation Frequency up to 104MHz  
Operating temperature Range  
Industrial -40°C~85°C  
Asynchronous mode read access : 70ns  
Burst mode for Read and Write operation  
4, 8, 16 or Continuous  
Package: 54-ball VFBGA  
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its  
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services  
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information  
and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or  
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or  
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to  
its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
1
www.issi.com - SRAM@issi.com  
Rev.A | June 2011  
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 		Pseudo Static RAM, 1MX16, 55ns, CMOS, PBGA48, TFBGA-48

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