5秒后页面跳转
IS62C1024L-70QI PDF预览

IS62C1024L-70QI

更新时间: 2024-09-18 22:21:51
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
11页 66K
描述
128K x 8 LOW POWER CMOS STATIC RAM

IS62C1024L-70QI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP32,.56
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.51最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:20.4285 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端口数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8输出特性:3-STATE
可输出:YES封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP32,.56
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:3 mm最大待机电流:0.0004 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.08 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:11.303 mmBase Number Matches:1

IS62C1024L-70QI 数据手册

 浏览型号IS62C1024L-70QI的Datasheet PDF文件第2页浏览型号IS62C1024L-70QI的Datasheet PDF文件第3页浏览型号IS62C1024L-70QI的Datasheet PDF文件第4页浏览型号IS62C1024L-70QI的Datasheet PDF文件第5页浏览型号IS62C1024L-70QI的Datasheet PDF文件第6页浏览型号IS62C1024L-70QI的Datasheet PDF文件第7页 
®
IS62C1024L  
ISSI  
128K x 8 LOW POWER CMOS STATIC RAM  
DECEMBER 2003  
FEATURES  
DESCRIPTION  
The ISSI IS62C1024L is a low power,131,072-word by 8-bit  
CMOS static RAM. It is fabricated using ISSI's high-performance  
CMOS technology. This highly reliable process coupled  
with innovative circuit design techniques, yields higher  
performance and low power consumption devices.  
• High-speed access time: 35, 70 ns  
Low active power: 450 mW (typical)  
Low standby power: 150 µW (typical) CMOS  
standby  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
When CE1 is HIGH or CE2 is LOW (deselected), the  
device assumes a standby mode at which the power  
dissipation can be reduced by using CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
Easy memory expansion is provided by using two Chip  
Enable inputs, CE1 and CE2. The active LOW Write  
Enable (WE) controls both writing and reading of the  
memory.  
• TTL compatible inputs and outputs  
• Single 5V (±10%) power supply  
The IS62C1024L is available in 32-pin plastic SOP and  
TSOP (type 1) packages.  
FUNCTIONAL BLOCK DIAGRAM  
128K x 8  
MEMORY ARRAY  
A0-A16  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CONTROL  
CIRCUIT  
CE2  
OE  
WE  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev. E  
1
11/26/03  

IS62C1024L-70QI 替代型号

型号 品牌 替代类型 描述 数据表
IS62C1024AL-35QI ISSI

完全替代

128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024AL-35QLI-TR ISSI

功能相似

IC SRAM 1M PARALLEL 32SOP
IS62C1024AL-35QLI ISSI

功能相似

128K x 8 LOW POWER CMOS STATIC RAM

与IS62C1024L-70QI相关器件

型号 品牌 获取价格 描述 数据表
IS62C1024L-70T ISSI

获取价格

128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-70TI ISSI

获取价格

128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024L-70W ICSI

获取价格

Standard SRAM, 128KX8, 70ns, CMOS, PDIP32,
IS62C1024L-70WI ICSI

获取价格

Standard SRAM, 128KX8, 70ns, CMOS, PDIP32,
IS62C1024-L85W ISSI

获取价格

Standard SRAM, 128KX8, 85ns, CMOS, PDIP32
IS62C1024LL ICSI

获取价格

128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024LL-70Q ICSI

获取价格

128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024LL-70T ICSI

获取价格

128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024LL-70W ICSI

获取价格

128K x 8 LOW POWER CMOS STATIC RAM
IS62C256 ISSI

获取价格

32K x 8 LOW POWER CMOS STATIC RAM