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IS62C256 PDF预览

IS62C256

更新时间: 2024-11-07 22:51:43
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
8页 40K
描述
32K x 8 LOW POWER CMOS STATIC RAM

IS62C256 数据手册

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®
ISSI  
IS62C256  
32K x 8 LOW POWER CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
The ISSI IS62C256 is a low power, 32,768 word by 8-bit  
CMOS static RAM. It is fabricated using ISSI's high-  
performance, low power CMOS technology.  
• Access time: 45, 70 ns  
• Low active power: 200 mW (typical)  
• Low standby power  
WhenCSisHIGH(deselected),thedeviceassumesastandby  
mode at which the power dissipation can be reduced down to  
250 µW (typical) at CMOS input levels.  
— 250 µW (typical) CMOS standby  
— 28 mW (typical) TTL standby  
• Fully static operation: no clock or refresh  
required  
Easy memory expansion is provided by using an active LOW  
ChipSelect(CS)inputandanactiveLOWOutputEnable(OE)  
input. TheactiveLOWWriteEnable(WE)controlsbothwriting  
and reading of the memory.  
• TTL compatible inputs and outputs  
• Single 5V power supply  
The IS62C256 is pin compatible with other 32K x 8 SRAMs in  
plastic SOP or TSOP (Type I) package.  
FUNCTIONAL BLOCK DIAGRAM  
32K X 8  
MEMORY ARRAY  
A0-A14  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CS  
OE  
WE  
CONTROL  
CIRCUIT  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which  
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
SR072-1E  
05/12/99  
1

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