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IS62C25616BL-45TI-TR PDF预览

IS62C25616BL-45TI-TR

更新时间: 2024-09-19 19:32:47
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
13页 415K
描述
Standard SRAM, 256KX16, 45ns, CMOS, PDSO44,

IS62C25616BL-45TI-TR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.92
最长访问时间:45 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
最大待机电流:0.000015 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.02 mA
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUALBase Number Matches:1

IS62C25616BL-45TI-TR 数据手册

 浏览型号IS62C25616BL-45TI-TR的Datasheet PDF文件第2页浏览型号IS62C25616BL-45TI-TR的Datasheet PDF文件第3页浏览型号IS62C25616BL-45TI-TR的Datasheet PDF文件第4页浏览型号IS62C25616BL-45TI-TR的Datasheet PDF文件第5页浏览型号IS62C25616BL-45TI-TR的Datasheet PDF文件第6页浏览型号IS62C25616BL-45TI-TR的Datasheet PDF文件第7页 
performanceCMOStechnology.Thishighlyreliableprocessꢀ  
coupledwithinnovativecircuitdesigntechniques,yieldsꢀ  
accessꢀtimesꢀasꢀfastꢀasꢀ12ꢀnsꢀwithꢀlowꢀpowerꢀconsumption.  
                                                                            
IS62C25616BL, IS65C25616BL  
256Kꢀxꢀ16ꢀHIGH-SPEEDꢀCMOSꢀSTATICꢀRAM  
MARCHꢀ2013  
FEATURES  
•ꢀ High-speedꢀaccessꢀtime:ꢀ45ꢀns  
•ꢀ LowꢀActiveꢀPower:ꢀ50ꢀmWꢀ(typical)  
DESCRIPTION  
Theꢀ ISSIꢀ IS62C25616BLꢀ andꢀ IS65C25616BLꢀ areꢀ high-  
speed,4,194,304-bitstaticRAMsorganizedas262,144ꢀ  
wordsby16bits.TheyarefabricatedusingISSI'shigh-  
•ꢀ LowꢀStandbyꢀPower:ꢀ10ꢀmWꢀ(typical)ꢀꢀ  
CMOSꢀstandby  
•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels  
•ꢀ Singleꢀ5Vꢀ ꢀ10%ꢀpowerꢀsupply  
Whenꢀ CEꢀ isꢀ HIGHꢀ (deselected),ꢀ theꢀ deviceꢀ assumesꢀ aꢀ  
standbymodeatwhichthepowerdissipationcanbereducedꢀ  
downꢀwithꢀCMOSꢀinputꢀlevels.  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ  
required  
•ꢀ Package:ꢀ44-pinꢀTSOPꢀ(TypeꢀII)  
EasyꢀmemoryꢀexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ  
andOutputEnableinputs,CEandOE.TheactiveLOWꢀ  
WriteꢀEnableꢀ(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀ  
memory.AdatabyteallowsUpperByte(UB)andLowerꢀ  
Byteꢀ(LB)ꢀaccess.  
•ꢀ Commercial,ꢀIndustrialꢀandꢀAutomotiveꢀtemper-  
atureꢀrangesꢀavailable  
•ꢀ Lead-freeꢀavailable  
TheꢀIS62C25616BLꢀandꢀIS65C25616BLꢀareꢀpackagedꢀinꢀ  
theꢀJEDECꢀstandardꢀ44-pinꢀTSOPꢀ(TypeꢀII).  
FUNCTIONAL BLOCK DIAGRAM  
256K x 16  
MEMORY ARRAY  
A0-A17  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyrightꢀ©ꢀ2013ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwithoutꢀ  
notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-  
estꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀ  
IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-  
ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsignificantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ  
unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:  
a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;  
b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand  
c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstances  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 ꢀ  
1
Rev.ꢀ B  
03/15/2013  

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