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IS62C1024L-55QI PDF预览

IS62C1024L-55QI

更新时间: 2024-09-18 23:59:47
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
9页 48K
描述
SRAM|128KX8|CMOS|SOP|32PIN|PLASTIC

IS62C1024L-55QI 数据手册

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®
IS62C1024L  
ISSI  
128K x 8 LOW POWER CMOS STATIC RAM  
MARCH 2002  
FEATURES  
DESCRIPTION  
The ISSI IS62C1024L is a low power,131,072-word by 8-bit  
CMOS static RAM. It is fabricated using ISSI's high-performance  
CMOS technology. This highly reliable process coupled  
with innovative circuit design techniques, yields higher  
performance and low power consumption devices.  
• High-speed access time: 35, 45, 55, 70 ns  
Low active power: 450 mW (typical)  
Low standby power: 150 µW (typical) CMOS  
standby  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
When CE1 is HIGH or CE2 is LOW (deselected), the  
device assumes a standby mode at which the power  
dissipation can be reduced by using CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
Easy memory expansion is provided by using two Chip  
Enable inputs, CE1 and CE2. The active LOW Write  
Enable (WE) controls both writing and reading of the  
memory.  
• TTL compatible inputs and outputs  
• Single 5V (±10%) power supply  
The IS62C1024L is available in 32-pin plastic SOP and  
TSOP (type 1) packages.  
FUNCTIONAL BLOCK DIAGRAM  
512 X 2048  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CE2  
CONTROL  
CIRCUIT  
OE  
WE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev. D  
1
03/05/02  

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