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IS62C1024L-55TI PDF预览

IS62C1024L-55TI

更新时间: 2024-09-19 20:13:39
品牌 Logo 应用领域
矽成 - ICSI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 445K
描述
Standard SRAM, 128KX8, 55ns, CMOS, PDSO32,

IS62C1024L-55TI 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:TSSOP, TSSOP32,.8,20Reach Compliance Code:unknown
风险等级:5.86最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.09 mA标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUALBase Number Matches:1

IS62C1024L-55TI 数据手册

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IS62C1024L  
128K x 8 LOW POWER CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
The ICSI IS62C1024L is a low power,131,072-word by 8-bit  
CMOS static RAM. It is fabricated using ICSI's high-  
performance CMOS technology. This highly reliable process  
coupled with innovative circuit design techniques, yields higher  
performance and low power consumption devices.  
• High-speed access time: 35, 45, 55, 70 ns  
• Low active power: 450 mW (typical)  
• Low standby power: 150 µW (typical) CMOS  
standby  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
When CE1 is HIGH or CE2 is LOW (deselected), the device  
assumes a standby mode at which the power dissipation can  
be reduced by using CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
Easy memory expansion is provided by using two Chip Enable  
inputs, CE1 and CE2. The active LOW Write Enable (WE)  
controls both writing and reading of the memory.  
• TTL compatible inputs and outputs  
• Single 5V (±10%) power supply  
The IS62C1024L is available in 32-pin 600mil DIP, 450mil SOP  
and 8*20mm TSOP-1 packages.  
FUNCTIONAL BLOCK DIAGRAM  
512 x 2048  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CE2  
CONTROL  
CIRCUIT  
OE  
WE  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
Integrated Circuit Solution Inc.  
SR017-0C  
1

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