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IS62C1024-70U PDF预览

IS62C1024-70U

更新时间: 2024-09-18 23:59:47
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
8页 105K
描述
IC-SM-1MB CMOS SRAM

IS62C1024-70U 数据手册

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®
IS62C1024  
128K x 8 HIGH-SPEED CMOS STATIC RAM  
ISSI  
JULY 1996  
FEATURES  
• High-speed access time: 35, 45, 55, 70 ns  
Low active power: 450 mW (typical)  
DESCRIPTION  
The ISSI IS62C1024 is a low power,131,072-word by 8-bit  
CMOS static RAM. It is fabricated using ISSI's high-  
performance CMOS technology. This highly reliable process  
coupledwithinnovativecircuitdesigntechniques,yieldshigher  
performance and low power consumption devices.  
Low standby power: 500 µW (typical) CMOS  
standby  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
When CE1 is HIGH or CE2 is LOW (deselected), the device  
assumes a standby mode at which the power dissipation can  
be reduced by using CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
EasymemoryexpansionisprovidedbyusingtwoChipEnable  
inputs, CE1 and CE2. The active LOW Write Enable (WE)  
controls both writing and reading of the memory.  
• TTL compatible inputs and outputs  
• Single 5V (±10%) power supply  
TheIS62C1024isavailablein32-pin600-milplasticDIP, 525-  
mil plastic SOP and TSOP (type 1) packages.  
FUNCTIONAL BLOCK DIAGRAM  
512 X 2048  
MEMORY ARRAY  
A0-A16  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CE2  
CONTROL  
CIRCUIT  
OE  
WE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which  
may appear in this publication. © Copyright 1996, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc.  
1
Rev. F 0796  
SR81995C024  

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