®
IS62C1024L
ISSI
128K x 8 LOW POWER CMOS STATIC RAM
MARCH 2002
FEATURES
DESCRIPTION
The ISSI IS62C1024L is a low power,131,072-word by 8-bit
CMOS static RAM. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields higher
performance and low power consumption devices.
• High-speed access time: 35, 45, 55, 70 ns
• Low active power: 450 mW (typical)
• Low standby power: 150 µW (typical) CMOS
standby
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
When CE1 is HIGH or CE2 is LOW (deselected), the
device assumes a standby mode at which the power
dissipation can be reduced by using CMOS input levels.
• Fully static operation: no clock or refresh
required
Easy memory expansion is provided by using two Chip
Enable inputs, CE1 and CE2. The active LOW Write
Enable (WE) controls both writing and reading of the
memory.
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
The IS62C1024L is available in 32-pin plastic SOP and
TSOP (type 1) packages.
FUNCTIONAL BLOCK DIAGRAM
512 X 2048
MEMORY ARRAY
A0-A16
DECODER
VCC
GND
I/O
DATA
COLUMN I/O
I/O0-I/O7
CIRCUIT
CE1
CE2
CONTROL
CIRCUIT
OE
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
1
03/05/02