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IS62C1024AL-35TI-TR PDF预览

IS62C1024AL-35TI-TR

更新时间: 2024-11-10 13:08:55
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
11页 75K
描述
Standard SRAM, 128KX8, 35ns, CMOS, PDSO32, 20 X 8 MM, TSOP1-32

IS62C1024AL-35TI-TR 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:TSSOP,针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41Factory Lead Time:12 weeks
风险等级:5.54Is Samacsys:N
最长访问时间:35 nsJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

IS62C1024AL-35TI-TR 数据手册

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®
IS62C1024AL  
IS65C1024AL  
ISSI  
128K x 8 LOW POWER CMOS  
STATIC RAM  
JANUARY 2005  
FEATURES  
DESCRIPTION  
TheISSIIS62C1024AL/IS65C1024ALisalowpower,131,072-  
word by 8-bit CMOS static RAM. It is fabricated using high-  
performance CMOS technology. This highly reliable pro-  
cess coupled with innovative circuit design techniques,  
yields higher performance and low power consumption  
devices.  
• High-speed access time: 35, 45 ns  
• Low active power: 100 mW (typical)  
• Low standby power: 20 µW (typical) CMOS  
standby  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
WhenCE1isHIGHorCE2isLOW(deselected),thedevice  
assumes a standby mode at which the power dissipation  
can be reduced by using CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
• TTL compatible inputs and outputs  
• Single 5V (±10%) power supply  
Easy memory expansion is provided by using two Chip  
Enableinputs,CE1andCE2.TheactiveLOWWriteEnable  
(WE) controls both writing and reading of the memory.  
• Commercial, Industrial, and Automotive tem-  
perature ranges available  
• Standard Pin Configuration:  
32-pin SOP/ 32-pin TSOP (Type 1)  
• Lead free available  
FUNCTIONAL BLOCK DIAGRAM  
128K x 8  
MEMORY ARRAY  
A0-A16  
DECODER  
VDD  
GND  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O0-I/O7  
CE1  
CONTROL  
CIRCUIT  
CE2  
OE  
WE  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
1
01/24/05  

IS62C1024AL-35TI-TR 替代型号

型号 品牌 替代类型 描述 数据表
IS62C1024AL-35TI ISSI

完全替代

128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024AL-35TLI-TR ISSI

类似代替

Standard SRAM, 128KX8, 35ns, CMOS, PDSO32, 20 X 8 MM, LEAD FREE, TSOP1-32
IS62C1024AL-35TLI ISSI

类似代替

128K x 8 LOW POWER CMOS STATIC RAM

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