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IS62C1024L PDF预览

IS62C1024L

更新时间: 2024-09-18 22:51:43
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
11页 66K
描述
128K x 8 LOW POWER CMOS STATIC RAM

IS62C1024L 数据手册

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®
IS62C1024L  
ISSI  
128K x 8 LOW POWER CMOS STATIC RAM  
DECEMBER 2003  
FEATURES  
DESCRIPTION  
The ISSI IS62C1024L is a low power,131,072-word by 8-bit  
CMOS static RAM. It is fabricated using ISSI's high-performance  
CMOS technology. This highly reliable process coupled  
with innovative circuit design techniques, yields higher  
performance and low power consumption devices.  
• High-speed access time: 35, 70 ns  
Low active power: 450 mW (typical)  
Low standby power: 150 µW (typical) CMOS  
standby  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
When CE1 is HIGH or CE2 is LOW (deselected), the  
device assumes a standby mode at which the power  
dissipation can be reduced by using CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
Easy memory expansion is provided by using two Chip  
Enable inputs, CE1 and CE2. The active LOW Write  
Enable (WE) controls both writing and reading of the  
memory.  
• TTL compatible inputs and outputs  
• Single 5V (±10%) power supply  
The IS62C1024L is available in 32-pin plastic SOP and  
TSOP (type 1) packages.  
FUNCTIONAL BLOCK DIAGRAM  
128K x 8  
MEMORY ARRAY  
A0-A16  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE1  
CONTROL  
CIRCUIT  
CE2  
OE  
WE  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev. E  
1
11/26/03  

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