Datasheet > IS61WV51216BLL

IS61WV51216BLL

更新时间： 2024-11-12 05:39:35

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
20页	198K
描述
512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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中文翻译

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IS61WV51216BLL 数据手册

IS61WV51216ALL

IS61WV51216BLL

IS64WV51216BLL

512K x 16 HIGH-SPEED ASYNCHRONOUS

CMOS STATIC RAM WITH 3.3V SUPPLY

OCTOBER2009

FEATURES

• High-speed access times:

8, 10, 20 ns

• High-performance, low-power CMOS process

• Multiple center power and ground pins for greater

noise immunity

DESCRIPTION

The ISSI IS61WV51216ALL/BLL and IS64WV51216BLL

are high-speed, 8M-bit static RAMs organized as 512K

words by 16 bits. It is fabricated using ISSI's high-perform-

anceCMOStechnology.Thishighlyreliableprocesscoupled

withinnovativecircuitdesigntechniques,yieldshigh-perfor-

mance and low power consumption devices.

• Easy memory expansion with CE and OE op-

tions

• CE power-down

• Fully static operation: no clock or refresh

required

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs, CE and OE. The active LOW

Write Enable (WE) controls both writing and reading of the

memory. A data byte allows Upper Byte (UB) and Lower

Byte (LB) access.

• TTL compatible inputs and outputs

• Single power supply

V^DD1.65V to 2.2V (IS61WV51216ALL)

speed = 20ns for V^DD1.65V to 2.2V

V^DD2.4V to 3.6V (IS61/64WV51216BLL)

speed = 10ns for V^DD2.4V to 3.6V

speed = 8ns for V^DD3.3V + 5%

• Packages available:

The device is packaged in the JEDEC standard 44-pin

TSOP Type II and 48-pin Mini BGA (9mm x 11mm).

–

48-ball miniBGA (9mm x 11mm)

– 44-pin TSOP (Type II)

• Industrial and Automotive Temperature Support

• Lead-free available

• Data control for upper and lower bytes

FUNCTIONAL BLOCK DIAGRAM

512K x 16

MEMORY ARRAY

A0-A18

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. F

10/01/09

12 3 4 5 6 7...20

中文翻译

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与IS61WV51216BLL相关器件

型号	品牌	获取价格	描述	数据表
IS61WV51216BLL-10MI	ISSI	获取价格	512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51216BLL-10MLI	ISSI	获取价格	512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51216BLL-10MLI-TR	ISSI	获取价格	Standard SRAM, 512KX16, 10ns, CMOS, PBGA48, 9 X 11 MM, LEAD FREE, MBGA-48
IS61WV51216BLL-10TI	ISSI	获取价格	512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51216BLL-10TLI	ISSI	获取价格	512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61WV51216BLL-10TLI-TR	ISSI	获取价格	Standard SRAM, 512KX16, 10ns, CMOS, PDSO44, LEAD FREE, PLASTIC, TSOP2-44
IS61WV51216EDALL	ISSI	获取价格	TTL compatible inputs and outputs
IS61WV51216EDBLL	ISSI	获取价格	TTL compatible inputs and outputs
IS61WV51216EDBLL-8TLI	ISSI	获取价格	Standard SRAM, 512KX16, 8ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS61WV51232ALL	ISSI	获取价格	512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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