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IS61SF25616-10TQ PDF预览

IS61SF25616-10TQ

更新时间： 2024-09-15 04:44:47
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
16页 110K
描述
256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM

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IS61SF25616-10TQ 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：QFP包装说明：LQFP, QFP100,.63X.87
针数：100Reach Compliance Code：not_compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.88最长访问时间：10 ns
最大时钟频率 (fCLK)：66 MHzI/O 类型：COMMON
JESD-30 代码：R-PQFP-G100JESD-609代码：e0
长度：20 mm内存密度：4194304 bit
内存集成电路类型：CACHE SRAM内存宽度：16
功能数量：1端子数量：100
字数：262144 words字数代码：256000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：256KX16
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：LQFP封装等效代码：QFP100,.63X.87
封装形状：RECTANGULAR封装形式：FLATPACK, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3.3 V认证状态：Not Qualified
座面最大高度：1.6 mm最大待机电流：0.05 A
最小待机电流：3.14 V子类别：SRAMs
最大压摆率：0.16 mA最大供电电压 (Vsup)：3.63 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.65 mm
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：14 mmBase Number Matches：1

IS61SF25616-10TQ 数据手册

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®
IS61SF25616  
IS61SF25618  
256K x 16, 256K x 18 SYNCHRONOUS  
FLOW-THROUGH STATIC RAM  
ISSI  
APRIL 2001  
FEATURES  
DESCRIPTION  
The ISSI IS61SF25616 and IS61SF25618 is a high-speed,  
low-power synchronous static RAM designed to provide  
a burstable, high-performance memory for high speed  
networkingandcommunicationapplications.Itisorganized  
as 262,144 words by 16 bits and 18 bits, fabricated with  
ISSI'sadvancedCMOStechnology.Thedeviceintegrates  
a 2-bit burst counter, high-speed SRAM core, and high-drive  
capability outputs into a single monolithic circuit. All  
synchronous inputs pass through registers controlled by  
a positive-edge-triggered single clock input.  
• Fast access times: 8 ns, 8.5 ns, 10 ns, and 12 ns  
• Internal self-timed write cycle  
• Individual Byte Write Control and Global Write  
• Clock controlled, registered address, data inputs  
and control signals  
• PentiumTM or linear burst sequence control  
using MODE input  
• Three chip enables for simple depth expansion  
and address pipelining  
Write cycles are internally self-timed and are initiated by  
the rising edge of the clock input. Write cycles can be from  
one to four bytes wide as controlled by the write control  
inputs.  
• Common data inputs and data outputs  
• JEDEC 100-Pin TQFP and  
119-pin PBGA package  
Separate byte enables allow individual bytes to be written.  
BW1 controls DQ1-8, BW2 controls DQ9-16, conditioned  
by BWE being LOW. A LOW on GW input would cause all  
bytes to be written.  
• Single +3.3V +10%, –5% power supply  
• Power-down snooze mode  
Bursts can be initiated with either ADSP (Address Status  
Processor) or ADSC (Address Status Cache Controller)  
input pins. Subsequent burst addresses can be generated  
internally by the IS61SF25616 and controlled by the ADV  
(burst address advance) input pin.  
The mode pin is used to select the burst sequence order,  
Linear burst is achieved when this pin is tied LOW.  
Interleave burst is achieved when this pin is tied HIGH or  
left floating.  
FAST ACCESS TIME  
Symbol  
tKQ  
Parameter  
Clock Access Time  
Cycle Time  
8
8
10  
100  
8.5  
8.5  
11  
10  
10  
15  
66  
12  
12  
15  
66  
Units  
ns  
ns  
tKC  
Frequency  
90  
MHz  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
Rev. A  
04/17/01  
1234567...16

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与IS61SF25616-10TQ相关器件

型号 品牌 获取价格 描述 数据表
IS61SF25616-10TQI ISSI

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 		256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61SF25616-11B ISSI

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 		Cache SRAM, 256KX16, 11ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61SF25616-11TQ ISSI

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 		Cache SRAM, 256KX16, 11ns, CMOS, PQFP100, TQFP-100
IS61SF25616-11TQI ISSI

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 		Cache SRAM, 256KX16, 11ns, CMOS, PQFP100, TQFP-100
IS61SF25616-12B ISSI

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 		256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61SF25616-12TQ ISSI

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 		256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61SF25616-12TQI ISSI

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 		256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM
IS61SF25616-7.5B ISSI

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 		Cache SRAM, 256KX16, 7.5ns, CMOS, PBGA119, PLASTIC, BGA-119
IS61SF25616-7.5TQ ISSI

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 		Cache SRAM, 256KX16, 7.5ns, CMOS, PQFP100, TQFP-100
IS61SF25616-8.5B ISSI

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 		256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM

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