Datasheet > IS61LV6416L-8T

IS61LV6416L-8T

更新时间： 2024-11-18 01:01:51

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
16页	146K
描述
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

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IS61LV6416L-8T 数据手册

IS61LV6416

IS61LV6416L

ISSI

64K x 16 HIGH-SPEED CMOS STATIC RAM

WITH 3.3V SUPPLY

NOVEMBER2005

FEATURES

DESCRIPTION

The ISSI IS61LV6416/IS61LV6416L is a high-speed,

1,048,576-bitstaticRAMorganizedas65,536wordsby16

bits. It is fabricated using ISSI's high-performance CMOS

technology. This highly reliable process coupled with

innovative circuit design techniques, yields access times

as fast as 8 ns with low power consumption.

• High-speed access time: 8, 10, 12 ns

• CMOS low power operation

— 61LV6416:

75 mW (typical) operating current

0.5 mW (typical) standby current

— 61LV6416L:

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

65 mW (typical) operating current

50 µW (typical) standby current

• TTL compatible interface levels

• Single 3.3V power supply

Easy memory expansion is provided by using Chip

Enable and Output Enable inputs, CE and OE. The active

LOW Write Enable (WE) controls both writing and reading

of the memory. A data byte allows Upper Byte (UB) and

Lower Byte (LB) access.

• Fully static operation: no clock or refresh

required

• Three state outputs

TheIS61LV6416/IS61LV6416LispackagedintheJEDEC

standard 44-pin 400-mil SOJ, 44-pin TSOP-II, and 48-pin

mini BGA (6mm x 8mm).

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

64K x 16

MEMORY ARRAY

A0-A15

DECODER

VDD

GND

I/O0-I/O7

Lower Byte

I/O

DATA

COLUMN I/O

CIRCUIT

I/O8-I/O15

Upper Byte

CONTROL

CIRCUIT

Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany

publishedinformationandbeforeplacingordersforproducts.

Integrated Silicon Solution, Inc.

Rev. I

11/22/05

12 3 4 5 6 7...16

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与IS61LV6416L-8T相关器件

型号	品牌	获取价格	描述	数据表
IS61LV6416L-8TI	ISSI	获取价格	64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6424	ICSI	获取价格	64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6424-10	ICSI	获取价格	64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6424-10PQ	ISSI	获取价格	Standard SRAM, 64KX24, 10ns, CMOS, PQFP100, PLASTIC, QFP-100
IS61LV6424-10TQ	ICSI	获取价格	64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6424-10TQI	ETC	获取价格	x24 SRAM
IS61LV6424-12TQ	ICSI	获取价格	64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6424-15TQ	ICSI	获取价格	64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV6424-15TQI	ETC	获取价格	x24 SRAM
IS61LV6424-9TQ	ICSI	获取价格	64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

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