Datasheet > IS61LV6424-9TQI

IS61LV6424-9TQI

更新时间： 2024-11-16 23:59:47

品牌	Logo	应用领域
其他 - ETC		静态存储器
页数	文件大小	规格书
10页	104K
描述
x24 SRAM

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中文翻译

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数据手册

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IS61LV6424-9TQI 数据手册

ISSI^®

DECEMBER 2000

IS61LV6424

64K x 24 HIGH-SPEED CMOS STATIC RAM

WITH 3.3V SUPPLY

FEATURES

DESCRIPTION

The ISSI IS61LV6424 is a high-speed, static RAM organized

as 65,536 words by 24 bits. It is fabricated using ISSI's high-

performance CMOS technology. This highly reliable process

coupled with innovative circuit design techniques, yields ac-

cess times as fast as 9 ns with low power consumption.

• High-speed access time: 9, 10, 12, 15 ns

• CMOS low power operation

❑ 594 mW (max.) operating @ 9 ns

❑ 36 mW (max.) CMOS standby

• TTL compatible interface levels

• Single 3.3V power supply

When CE1 is HIGH or CE2 is LOW (deselected), the device

assumes a standby mode at which the power dissipation can

be reduced down with CMOS input levels.

• Fully static operation: no clock or refresh

required

Easy memory expansion is provided by using Chip Enable

andOutputEnableinputs,CE1,CE2,andOE.TheactiveLOW

Write Enable (WE) controls both writing and reading of the

memory.

• Three state outputs

• Available in 100-pin TQFP

• Industrial temperature available

The IS61LV6424 is packaged in the JEDEC standard

100-pin TQFP

FUNCTIONAL BLOCK DIAGRAM

GND

64K x 24

MEMORY ARRAY

ROW

DECODER

A0-A14

A15

X/Y

V/S

MULTIPLEX

ADDRESS

CONTROL

COLUMN

DECODER

CE1

CE2

CONTROL

CIRCUIT

I/O DATA

I/O0-I/O23

CIRCUIT

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

12/19/00

12 3 4 5 6 7...10

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