5秒后页面跳转
IS61LV51216-8M PDF预览

IS61LV51216-8M

更新时间: 2024-09-15 05:11:55
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
15页 117K
描述
512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV51216-8M 数据手册

 浏览型号IS61LV51216-8M的Datasheet PDF文件第2页浏览型号IS61LV51216-8M的Datasheet PDF文件第3页浏览型号IS61LV51216-8M的Datasheet PDF文件第4页浏览型号IS61LV51216-8M的Datasheet PDF文件第5页浏览型号IS61LV51216-8M的Datasheet PDF文件第6页浏览型号IS61LV51216-8M的Datasheet PDF文件第7页 
®
IS61LV51216  
IS64LV51216  
ISSI  
512K x 16 HIGH SPEED ASYNCHRONOUS  
CMOS STATIC RAM WITH 3.3V SUPPLY  
DECEMBER2005  
FEATURES  
DESCRIPTION  
The ISSI IS61/64LV51216 is a high-speed, 8M-bit static  
RAMorganizedas525,288wordsby16bits.Itisfabricated  
using ISSI's high-performance CMOS technology. This  
highly reliable process coupled with innovative circuit de-  
sign techniques, yields high-performance and low power  
consumption devices.  
• High-speed access time:  
— 8, 10, and 12 ns  
• CMOS low power operation  
• Low stand-by power:  
— Less than 5 mA (typ.) CMOS stand-by  
• TTL compatible interface levels  
• Single 3.3V power supply  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down with CMOS input levels.  
• Fully static operation: no clock or refresh  
required  
Easy memory expansion is provided by using Chip Enable  
and Output Enable inputs, CE and OE. The active LOW  
Write Enable (WE) controls both writing and reading of the  
memory. A data byte allows Upper Byte (UB) and Lower  
Byte (LB) access.  
• Three state outputs  
• Data control for upper and lower bytes  
• Industrial and Automotive temperatures available  
• Lead-free available  
The IS61/64LV51216 is packaged in the JEDEC standard  
44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).  
FUNCTIONAL BLOCK DIAGRAM  
512K x 16  
MEMORY ARRAY  
A0-A18  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
1
Rev. D  
12/06/05  

与IS61LV51216-8M相关器件

型号 品牌 获取价格 描述 数据表
IS61LV51216-8MI ISSI

获取价格

512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV51216-8T ISSI

获取价格

512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV51216-8TI ISSI

获取价格

512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV51216-8TI-TR ISSI

获取价格

暂无描述
IS61LV51216-8TL ISSI

获取价格

512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV51216-8TL-TR ISSI

获取价格

Standard SRAM, 512KX16, 8ns, CMOS, PDSO44, LEAD FREE, PLASTIC, TSOP2-44
IS61LV51216-8T-TR ISSI

获取价格

Standard SRAM, 512KX16, 8ns, CMOS, PDSO44, PLASTIC, TSOP2-44
IS61LV5128 ICSI

获取价格

512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128-10 ISSI

获取价格

512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128-10B ISSI

获取价格

512K x 8 HIGH-SPEED CMOS STATIC RAM