Datasheet > 存储 > SRAM> IS61LV5128-10T

IS61LV5128-10T

更新时间： 2024-01-02 18:07:11

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
9页	75K
描述
512K x 8 HIGH-SPEED CMOS STATIC RAM

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IS61LV5128-10T 数据手册

IS61LV5128

ISSI

512K x 8 HIGH-SPEED CMOS STATIC RAM

JULY 2001

FEATURES

DESCRIPTION

• High-speed access times:

10, 12 and 15 ns

The ISSI IS61LV5128 is a very high-speed, low power,

524,288-wordby8-bitCMOSstaticRAM.TheIS61LV5128

is fabricated using ISSI's high-performance CMOS tech-

nology. This highly reliable process coupled with innova-

tive circuit design techniques, yields higher performance

and low power consumption devices.

• High-performance, low-power CMOS process

• Multiple center power and ground pins for

greater noise immunity

• Easy memory expansion with CE and OE

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down to 250 µW (typical) with CMOS input levels.

options

• CE power-down

• Fully static operation: no clock or refresh

required

The IS61LV5128 operates from a single 3.3V power

supply and all inputs are TTL-compatible.

• TTL compatible inputs and outputs

• Single 3.3V power supply

The IS61LV5128 is available in 36-pin 400-mil SOJ, 36-

pin mini BGA, and 44-pin TSOP (Type II) packages.

• Packagesavailable:

– 36-pin 400-mil SOJ

– 36-pin miniBGA

– 44-pin TSOP (Type II)

FUNCTIONAL BLOCK DIAGRAM

512K X 8

MEMORY ARRAY

A0-A18

DECODER

VCC

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CONTROL

CIRCUIT

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

07/16/01

12 3 4 5 6 7...9

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IS61LV5128-10TI	ICSI	获取价格	512K x 8 HIGH-SPEED CMOS STATIC RAM
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IS61LV5128-12KI	ISSI	获取价格	512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128-12T	ISSI	获取价格	512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128-12T	ICSI	获取价格	512K x 8 HIGH-SPEED CMOS STATIC RAM