5秒后页面跳转
IS61LV5128AL-10BI-TR PDF预览

IS61LV5128AL-10BI-TR

更新时间: 2024-01-06 20:35:25
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器
页数 文件大小 规格书
13页 98K
描述
Standard SRAM, 512KX8, 10ns, CMOS, PBGA36, 8 X 10 MM, MINI, BGA-36

IS61LV5128AL-10BI-TR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:PLASTIC, TSOP2-44针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41Factory Lead Time:8 weeks
风险等级:5.17最长访问时间:10 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:18.415 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:44
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.02 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.095 mA最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

IS61LV5128AL-10BI-TR 数据手册

 浏览型号IS61LV5128AL-10BI-TR的Datasheet PDF文件第2页浏览型号IS61LV5128AL-10BI-TR的Datasheet PDF文件第3页浏览型号IS61LV5128AL-10BI-TR的Datasheet PDF文件第4页浏览型号IS61LV5128AL-10BI-TR的Datasheet PDF文件第5页浏览型号IS61LV5128AL-10BI-TR的Datasheet PDF文件第6页浏览型号IS61LV5128AL-10BI-TR的Datasheet PDF文件第7页 
®
IS61LV5128AL  
ISSI  
512K x 8 HIGH-SPEED CMOS STATIC RAM  
APRIL2005  
DESCRIPTION  
FEATURES  
• High-speed access times:  
10, 12 ns  
TheISSIIS61LV5128ALisaveryhigh-speed,lowpower,  
524,288-word by 8-bit CMOS static RAM. The  
IS61LV5128AL is fabricated using ISSI's high-perform-  
ance CMOS technology. This highly reliable process  
coupled with innovative circuit design techniques, yields  
higherperformanceandlowpowerconsumptiondevices.  
• High-performance, low-power CMOS process  
• Multiple center power and ground pins for  
greater noise immunity  
• Easy memory expansion with CE and OE  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduceddownto250µW(typical)withCMOSinputlevels.  
options  
CE power-down  
• Fully static operation: no clock or refresh  
required  
The IS61LV5128AL operates from a single 3.3V power  
supply and all inputs are TTL-compatible.  
• TTL compatible inputs and outputs  
• Single 3.3V power supply  
TheIS61LV5128ALisavailablein36-pin400-milSOJ,36-  
pin mini BGA, and 44-pin TSOP (Type II) packages.  
• Packagesavailable:  
– 36-pin 400-mil SOJ  
– 36-pin miniBGA  
– 44-pin TSOP (Type II)  
• Lead-free available  
FUNCTIONAL BLOCK DIAGRAM  
512K X 8  
MEMORY ARRAY  
A0-A18  
DECODER  
VDD  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
1
04/15/05  

与IS61LV5128AL-10BI-TR相关器件

型号 品牌 获取价格 描述 数据表
IS61LV5128AL-10BLI ISSI

获取价格

512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10K ISSI

获取价格

512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10KI ISSI

获取价格

512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10KI-TR ISSI

获取价格

Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, PLASTIC, MS-027, SOJ-36
IS61LV5128AL-10KLI ISSI

获取价格

512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10T ISSI

获取价格

512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10TI ISSI

获取价格

512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10TLI ISSI

获取价格

512K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV5128AL-10TLI-TR ISSI

获取价格

暂无描述
IS61LV5128AL-12K ISSI

获取价格

512K x 8 HIGH-SPEED CMOS STATIC RAM