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IS61LV5128-10BI PDF预览

IS61LV5128-10BI

更新时间: 2024-11-05 23:01:19
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
9页 75K
描述
512K x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV5128-10BI 数据手册

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®
IS61LV5128  
ISSI  
512K x 8 HIGH-SPEED CMOS STATIC RAM  
JULY 2001  
FEATURES  
DESCRIPTION  
• High-speed access times:  
10, 12 and 15 ns  
The ISSI IS61LV5128 is a very high-speed, low power,  
524,288-wordby8-bitCMOSstaticRAM.TheIS61LV5128  
is fabricated using ISSI's high-performance CMOS tech-  
nology. This highly reliable process coupled with innova-  
tive circuit design techniques, yields higher performance  
and low power consumption devices.  
• High-performance, low-power CMOS process  
• Multiple center power and ground pins for  
greater noise immunity  
• Easy memory expansion with CE and OE  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 250 µW (typical) with CMOS input levels.  
options  
CE power-down  
• Fully static operation: no clock or refresh  
required  
The IS61LV5128 operates from a single 3.3V power  
supply and all inputs are TTL-compatible.  
• TTL compatible inputs and outputs  
• Single 3.3V power supply  
The IS61LV5128 is available in 36-pin 400-mil SOJ, 36-  
pin mini BGA, and 44-pin TSOP (Type II) packages.  
• Packagesavailable:  
– 36-pin 400-mil SOJ  
– 36-pin miniBGA  
– 44-pin TSOP (Type II)  
FUNCTIONAL BLOCK DIAGRAM  
512K X 8  
MEMORY ARRAY  
A0-A18  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
Rev. B  
07/16/01  

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