IS61LV5128-10K

更新时间： 2024-01-14 11:46:00

品牌	Logo	应用领域
矽成 - ICSI		/
页数	文件大小	规格书
8页	444K
描述
512K x 8 HIGH-SPEED CMOS STATIC RAM

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IS61LV5128-10K 数据手册

IS61LV5128

512K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

DESCRIPTION

The ICSI IS61LV5128 is a very high-speed, low power,

524,288-word by 8-bit COMS static RAM. The IS61LV5128 is

fabricated using ICSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit

design techniques, yields higher preformance and low power

consumotion devices.

High-speed access times:

8, 10, 12 and 15 ns

High-preformance, lower-power CMOS process

Multiple center power and ground pins for

greater noise immunity

Easy memory expansion with CE and OE

options

When CE is HIGH (deselected), the device assumes a standby

mode at which the power dissipation can be reduced down to

250 µW (typical) with CMOS input levels.

CE power-down

Fully static operation: no clock or refresh

reguired

The IS61LV5128 operates from a single 3.3V power supply

and all inputs are TTL-compatible.

TTL compatible inputs and outputs

Single 3.3V + 10% power supply

Packages available:

The IS61LV5128 is available in 36-pin, 400mil SOJ and 44-pin

TSOP-2 package.

36-pin 400mil SOJ

44-pin TSOP-2

FUNCTIONAL BLOCK DIAGRAM

512K X 8

MEMORY ARRAY

A0-A18

DECODER

VCC

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CONTROL

CIRCUIT

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors

Integrated Circuit Solution, Inc.

SR027-0C

12 3 4 5 6 7 8

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IS61LV5128-10KI	ISSI	获取价格	512K x 8 HIGH-SPEED CMOS STATIC RAM
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