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IS61LV25616AL-10LQLI PDF预览

IS61LV25616AL-10LQLI

更新时间: 2024-11-16 12:08:39
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器
页数 文件大小 规格书
16页 382K
描述
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV25616AL-10LQLI 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:QFP包装说明:LQFP, QFP44,.47SQ,32
针数:44Reach Compliance Code:compliant
风险等级:5.48Is Samacsys:N
最长访问时间:10 nsI/O 类型:COMMON
JESD-30 代码:S-PQFP-G44长度:10 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP44,.47SQ,32封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.015 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.1 mA最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:QUAD
宽度:10 mmBase Number Matches:1

IS61LV25616AL-10LQLI 数据手册

 浏览型号IS61LV25616AL-10LQLI的Datasheet PDF文件第2页浏览型号IS61LV25616AL-10LQLI的Datasheet PDF文件第3页浏览型号IS61LV25616AL-10LQLI的Datasheet PDF文件第4页浏览型号IS61LV25616AL-10LQLI的Datasheet PDF文件第5页浏览型号IS61LV25616AL-10LQLI的Datasheet PDF文件第6页浏览型号IS61LV25616AL-10LQLI的Datasheet PDF文件第7页 
IS61LV25616AL  
256K x 16 HIGH SPEED ASYNCHRONOUS  
CMOS STATIC RAM WITH 3.3V SUPPLY  
DECEMBER 2011  
DESCRIPTION  
FEATURES  
TheꢀISSIꢀIS61LV25616ALꢀisꢀaꢀhigh-speed,ꢀ4,194,304-bitꢀ  
staticꢀRAMꢀorganizedꢀasꢀ262,144ꢀwordsꢀbyꢀ16ꢀbits.ꢀItꢀisꢀ  
fabricatedꢀusingꢀISSI'sꢀhigh-performanceꢀCMOSꢀtechnol-  
ogy.Thisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀwithꢀinnovativeꢀ  
circuitdesigntechniques,yieldshigh-performanceandlowꢀ  
powerꢀconsumptionꢀdevices.  
•ꢀ High-speedꢀaccessꢀtime:ꢀ  
—ꢀ10,ꢀ12ꢀnsꢀ  
•ꢀ CMOSꢀlowꢀpowerꢀoperation  
•ꢀ Lowꢀstand-byꢀpower:ꢀ  
—ꢀꢀLessꢀthanꢀ5ꢀmAꢀ(typ.)ꢀCMOSꢀstand-by  
•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels  
•ꢀ Singleꢀ3.3Vꢀpowerꢀsupply  
WhenCEisHIGH(deselected),thedeviceassumesaꢀ  
standbyꢀmodeꢀatꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀre-  
ducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ  
required  
EasymemoryexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ  
andꢀOutputꢀEnableꢀinputs,ꢀCEꢀandꢀOE.ꢀTheꢀactiveꢀLOWꢀ  
WriteEnableꢀ(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀ  
memory.ꢀꢀAꢀdataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀ  
Byteꢀ(LB)ꢀaccess.  
•ꢀ Threeꢀstateꢀoutputs  
•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes  
•ꢀ Industrialꢀtemperatureꢀavailable  
•ꢀ Lead-freeꢀavailable  
TheꢀIS61LV25616ALꢀisꢀpackagedꢀinꢀtheꢀJEDECꢀstandardꢀ  
44-pin400-milSOJ,44-pinꢀTSOPꢀTypeII,44-pinLQFPꢀ  
andꢀ48-pinꢀMiniꢀBGAꢀ(8mmꢀxꢀ10mm).  
FUNCTIONAL BLOCK DIAGRAM  
256K x 16  
MEMORY ARRAY  
A0-A17  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyrightꢀ©ꢀ2011ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwithoutꢀ  
notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-  
estꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.  
IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-  
ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsignificantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ  
unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:  
a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;  
b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand  
c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstancesꢀ  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774ꢀ  
1
Rev. F  
12/15/2011  

IS61LV25616AL-10LQLI 替代型号

型号 品牌 替代类型 描述 数据表
IS61WV25616BLL-10TLI-TR ISSI

完全替代

Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS61WV25616EDBLL-10TLI ISSI

完全替代

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
IS61WV25616BLL-10TLI ISSI

完全替代

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

与IS61LV25616AL-10LQLI相关器件

型号 品牌 获取价格 描述 数据表
IS61LV25616AL-10LQLI-TR ISSI

获取价格

Standard SRAM, 256KX16, 10ns, CMOS, PQFP44,
IS61LV25616AL-10T ISSI

获取价格

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10TI ISSI

获取价格

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10TI-TR ISSI

获取价格

Standard SRAM, 256KX16, 10ns, CMOS, PDSO44,
IS61LV25616AL-10TL ISSI

获取价格

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10TLI ISSI

获取价格

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-10TLI-TR ISSI

获取价格

暂无描述
IS61LV25616AL-10T-TR ISSI

获取价格

Standard SRAM, 256KX16, 10ns, CMOS, PDSO44,
IS61LV25616AL-12B ISSI

获取价格

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV25616AL-12K ISSI

获取价格

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY