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IS61LV25616AL-12TI-TR PDF预览

IS61LV25616AL-12TI-TR

更新时间: 2024-11-16 19:52:15
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
16页 341K
描述
Standard SRAM, 256KX16, 12ns, CMOS, PDSO44,

IS61LV25616AL-12TI-TR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.92
最长访问时间:12 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:3.3 V认证状态:Not Qualified
最大待机电流:0.015 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.1 mA
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUALBase Number Matches:1

IS61LV25616AL-12TI-TR 数据手册

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IS61LV25616AL  
256K x 16 HIGH SPEED ASYNCHRONOUS  
CMOS STATIC RAM WITH 3.3V SUPPLY  
DECEMBER 2011  
DESCRIPTION  
FEATURES  
TheꢀISSIꢀIS61LV25616ALꢀisꢀaꢀhigh-speed,ꢀ4,194,304-bitꢀ  
staticꢀRAMꢀorganizedꢀasꢀ262,144ꢀwordsꢀbyꢀ16ꢀbits.ꢀItꢀisꢀ  
fabricatedꢀusingꢀISSI'sꢀhigh-performanceꢀCMOSꢀtechnol-  
ogy.Thisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀwithꢀinnovativeꢀ  
circuitdesigntechniques,yieldshigh-performanceandlowꢀ  
powerꢀconsumptionꢀdevices.  
•ꢀ High-speedꢀaccessꢀtime:ꢀ  
—ꢀ10,ꢀ12ꢀnsꢀ  
•ꢀ CMOSꢀlowꢀpowerꢀoperation  
•ꢀ Lowꢀstand-byꢀpower:ꢀ  
—ꢀꢀLessꢀthanꢀ5ꢀmAꢀ(typ.)ꢀCMOSꢀstand-by  
•ꢀ TTLꢀcompatibleꢀinterfaceꢀlevels  
•ꢀ Singleꢀ3.3Vꢀpowerꢀsupply  
WhenCEisHIGH(deselected),thedeviceassumesaꢀ  
standbyꢀmodeꢀatꢀwhichꢀtheꢀpowerꢀdissipationꢀcanꢀbeꢀre-  
ducedꢀdownꢀwithꢀCMOSꢀinputꢀlevels.  
•ꢀ Fullyꢀstaticꢀoperation:ꢀnoꢀclockꢀorꢀrefreshꢀꢀ  
required  
EasymemoryexpansionꢀisꢀprovidedꢀbyꢀusingꢀChipꢀEnableꢀ  
andꢀOutputꢀEnableꢀinputs,ꢀCEꢀandꢀOE.ꢀTheꢀactiveꢀLOWꢀ  
WriteEnableꢀ(WE)ꢀcontrolsꢀbothꢀwritingꢀandꢀreadingꢀofꢀtheꢀ  
memory.ꢀꢀAꢀdataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀ  
Byteꢀ(LB)ꢀaccess.  
•ꢀ Threeꢀstateꢀoutputs  
•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes  
•ꢀ Industrialꢀtemperatureꢀavailable  
•ꢀ Lead-freeꢀavailable  
TheꢀIS61LV25616ALꢀisꢀpackagedꢀinꢀtheꢀJEDECꢀstandardꢀ  
44-pin400-milSOJ,44-pinꢀTSOPꢀTypeII,44-pinLQFPꢀ  
andꢀ48-pinꢀMiniꢀBGAꢀ(8mmꢀxꢀ10mm).  
FUNCTIONAL BLOCK DIAGRAM  
256K x 16  
MEMORY ARRAY  
A0-A17  
DECODER  
VDD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
UB  
LB  
Copyrightꢀ©ꢀ2011ꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀꢀAllꢀrightsꢀreserved.ꢀꢀISSIꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀchangesꢀtoꢀthisꢀspecificationꢀandꢀitsꢀproductsꢀatꢀanyꢀtimeꢀwithoutꢀ  
notice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀtheꢀlat-  
estꢀversionꢀofꢀthisꢀdeviceꢀspecificationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.  
IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreason-  
ablyꢀbeꢀexpectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsignificantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀ  
unlessꢀIntegratedꢀSiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:  
a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;  
b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand  
c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstancesꢀ  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774ꢀ  
1
Rev. F  
12/15/2011  

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