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IS61LV2568 PDF预览

IS61LV2568

更新时间: 2024-11-15 21:55:43
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
8页 90K
描述
256K x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV2568 数据手册

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ISSI®  
DECEMBER 2000  
IS61LV2568  
256K x 8 HIGH-SPEED CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
The ISSI IS61LV2568 is a very high-speed, low power,  
262,144-wordby8-bitCMOSstaticRAM.TheIS61LV2568  
is fabricated using ISSI's high-performance CMOS tech-  
nology. This highly reliable process coupled with innova-  
tive circuit design techniques, yields higher performance  
and low power consumption devices.  
• High-speed access times:  
8, 10, 12 and 15 ns  
• High-performance, low-power CMOS process  
• Multiple center power and ground pins for  
greater noise immunity  
• Easy memory expansion with CE and OE  
options  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 36mW (max.) with CMOS input levels.  
CE power-down  
The IS61LV2568 operates from a single 3.3V power  
supply and all inputs are TTL-compatible.  
• Low power: 540 mW @ 10 ns  
36 mW standby mode  
The IS61LV2568 is available in 36-pin 400-mil SOJ, and  
44-pin TSOP (Type II) packages.  
• TTL compatible inputs and outputs  
• Single 3.3V 10ꢀ power supply  
• Packages available:  
– 36-pin 400-mil SOJ  
– 44-pin TSOP (Type II)  
FUNCTIONAL BLOCK DIAGRAM  
256K X 8  
MEMORY ARRAY  
A0-A17  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev.A  
12/19/00  
1

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