5秒后页面跳转
IS61LV2568-10T PDF预览

IS61LV2568-10T

更新时间: 2024-02-02 20:07:23
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
8页 90K
描述
256K x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV2568-10T 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.53
最长访问时间:10 ns其他特性:TTL COMPATIBLE
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:18.41 mm内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):2.97 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

IS61LV2568-10T 数据手册

 浏览型号IS61LV2568-10T的Datasheet PDF文件第2页浏览型号IS61LV2568-10T的Datasheet PDF文件第3页浏览型号IS61LV2568-10T的Datasheet PDF文件第4页浏览型号IS61LV2568-10T的Datasheet PDF文件第5页浏览型号IS61LV2568-10T的Datasheet PDF文件第6页浏览型号IS61LV2568-10T的Datasheet PDF文件第7页 
ISSI®  
DECEMBER 2000  
IS61LV2568  
256K x 8 HIGH-SPEED CMOS STATIC RAM  
FEATURES  
DESCRIPTION  
The ISSI IS61LV2568 is a very high-speed, low power,  
262,144-wordby8-bitCMOSstaticRAM.TheIS61LV2568  
is fabricated using ISSI's high-performance CMOS tech-  
nology. This highly reliable process coupled with innova-  
tive circuit design techniques, yields higher performance  
and low power consumption devices.  
• High-speed access times:  
8, 10, 12 and 15 ns  
• High-performance, low-power CMOS process  
• Multiple center power and ground pins for  
greater noise immunity  
• Easy memory expansion with CE and OE  
options  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 36mW (max.) with CMOS input levels.  
CE power-down  
The IS61LV2568 operates from a single 3.3V power  
supply and all inputs are TTL-compatible.  
• Low power: 540 mW @ 10 ns  
36 mW standby mode  
The IS61LV2568 is available in 36-pin 400-mil SOJ, and  
44-pin TSOP (Type II) packages.  
• TTL compatible inputs and outputs  
• Single 3.3V 10ꢀ power supply  
• Packages available:  
– 36-pin 400-mil SOJ  
– 44-pin TSOP (Type II)  
FUNCTIONAL BLOCK DIAGRAM  
256K X 8  
MEMORY ARRAY  
A0-A17  
DECODER  
VCC  
GND  
I/O  
DATA  
COLUMN I/O  
I/O0-I/O7  
CIRCUIT  
CE  
CONTROL  
CIRCUIT  
OE  
WE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev.A  
12/19/00  
1

与IS61LV2568-10T相关器件

型号 品牌 获取价格 描述 数据表
IS61LV2568-10TI ISSI

获取价格

x8 SRAM
IS61LV2568-10T-TR ISSI

获取价格

Standard SRAM, 256KX8, 10ns, CMOS, PDSO44, TSOP2-44
IS61LV2568-12K ISSI

获取价格

256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-12KI ISSI

获取价格

x8 SRAM
IS61LV2568-12T ISSI

获取价格

256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-12TI ISSI

获取价格

x8 SRAM
IS61LV2568-15K ISSI

获取价格

256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-15KI ISSI

获取价格

x8 SRAM
IS61LV2568-15T ISSI

获取价格

256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568-15TI ISSI

获取价格

x8 SRAM