5秒后页面跳转
IS61LV2568L-10K PDF预览

IS61LV2568L-10K

更新时间: 2024-11-16 21:12:03
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 55K
描述
Standard SRAM, 256KX8, 10ns, CMOS, PDSO36, 0.400 INCH, SOJ-36

IS61LV2568L-10K 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOJ
包装说明:0.400 INCH, SOJ-36针数:36
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.53
最长访问时间:10 nsJESD-30 代码:R-PDSO-J36
JESD-609代码:e0长度:23.5 mm
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:36
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:3.76 mm
最大供电电压 (Vsup):3.63 V最小供电电压 (Vsup):2.97 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

IS61LV2568L-10K 数据手册

 浏览型号IS61LV2568L-10K的Datasheet PDF文件第2页浏览型号IS61LV2568L-10K的Datasheet PDF文件第3页浏览型号IS61LV2568L-10K的Datasheet PDF文件第4页浏览型号IS61LV2568L-10K的Datasheet PDF文件第5页浏览型号IS61LV2568L-10K的Datasheet PDF文件第6页浏览型号IS61LV2568L-10K的Datasheet PDF文件第7页 
®
IS61LV2568L  
IS61LV2568LL  
ISSI  
256K x 8 HIGH-SPEED CMOS STATIC RAM  
PRELIMINARYINFORMATION  
SEPTEMBER2002  
FEATURES  
• High-speed access time:  
IS61LV2568L: 8, 10 ns  
IS61LV2568LL: 12, 15 ns  
• Operating Current:  
• Packages available:  
– 36-pin 400-mil SOJ  
– 44-pin TSOP (Type II)  
– 36-ball mini BGA (6mm x 8mm)  
IS61LV2568L: 50mA (typ.)  
IS61LV2568LL: 25mA (typ.)  
• Standby Current:  
DESCRIPTION  
The ISSI IS61LV2568L/IS61LV2568LL is a very high-  
speed, low power, 262,144-word by 8-bit CMOS static  
RAM. The IS61LV2568L/IS61LV2568LL is fabricated us-  
ingISSI'shigh-performanceCMOStechnology.Thishighly  
reliable process coupled with innovative circuit design  
techniques, yields higher performance and low power  
consumption devices.  
IS61LV2568L: 500µA (typ.)  
IS61LV2568LL: 250µA(typ.)  
• Multiple center power and ground pins for  
greater noise immunity  
• Easy memory expansion with CE and OE  
When CE is HIGH (deselected), the device assumes a  
standby mode at which the power dissipation can be  
reduced down to 36mW (max.) with CMOS input levels.  
options  
CE power-down  
• TTL compatible inputs and outputs  
• Single 3.3V power supply  
The S61LV2568L/IS61LV2568LL operates from a single  
3.3V power supply and all inputs are TTL-compatible.  
TheS61LV2568L/IS61LV2568LL isavailablein36-pin400-  
milSOJ,44-pinTSOP(TypeII),and36-ballminiBGA(6mm  
x 8mm) packages.  
FUNCTIONAL BLOCK DIAGRAM  
256K X 8  
MEMORY ARRAY  
A0-A17  
DECODER  
V
DD  
GND  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O0-I/O7  
CE  
OE  
WE  
CONTROL  
CIRCUIT  
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. 00D  
1
09/12/02  

与IS61LV2568L-10K相关器件

型号 品牌 获取价格 描述 数据表
IS61LV2568L-10KI ISSI

获取价格

256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10KLI ISSI

获取价格

256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10T ISSI

获取价格

256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-10TI ISSI

获取价格

暂无描述
IS61LV2568L-10TL ISSI

获取价格

256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8K ISSI

获取价格

256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8T ISSI

获取价格

256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L-8TL ISSI

获取价格

256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV2568LL-15BI ISSI

获取价格

Standard SRAM, 256KX8, 15ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36
IS61LV2568LL-15KI ISSI

获取价格

Standard SRAM, 256KX8, 15ns, CMOS, PDSO36, 0.400 INCH, SOJ-36